发明申请
- 专利标题: LIGHT EMITTING DIODE
- 专利标题(中): 发光二极管
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申请号: US13479230申请日: 2012-05-23
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公开(公告)号: US20130140520A1公开(公告)日: 2013-06-06
- 发明人: ZHEN-DONG ZHU , QUN-QING LI , LI-HUI ZHANG , MO CHEN , SHOU-SHAN FAN
- 申请人: ZHEN-DONG ZHU , QUN-QING LI , LI-HUI ZHANG , MO CHEN , SHOU-SHAN FAN
- 申请人地址: TW Tu-Cheng CN Beijing
- 专利权人: HON HAI PRECISION INDUSTRY CO., LTD.,TSINGHUA UNIVERSITY
- 当前专利权人: HON HAI PRECISION INDUSTRY CO., LTD.,TSINGHUA UNIVERSITY
- 当前专利权人地址: TW Tu-Cheng CN Beijing
- 优先权: CN201110395463.9 20111203
- 主分类号: H01L33/06
- IPC分类号: H01L33/06 ; B82Y20/00
摘要:
A light emitting diode including a substrate, a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The substrate includes an epitaxial growth surface and a light emitting surface. The first semiconductor layer, the active layer and the second semiconductor layer is stacked on the epitaxial growth surface. The first semiconductor layer includes a first surface and a second surface, and the first surface is connected to the substrate. The active layer and the second semiconductor layer are stacked on the second surface in that order. A first electrode electrically is connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are located on the surface of the first surface of the first semiconductor layer and aligned side by side, and a cross section of each of the three-dimensional nano-structure is M-shaped.
公开/授权文献
- US08759858B2 Light emitting diode 公开/授权日:2014-06-24
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