发明申请
US20130140592A1 LIGHT EMITTING DIODE WITH IMPROVED LIGHT EXTRACTION EFFICIENCY AND METHODS OF MANUFACTURING SAME 审中-公开
具有改进的光提取效率的发光二极管及其制造方法

LIGHT EMITTING DIODE WITH IMPROVED LIGHT EXTRACTION EFFICIENCY AND METHODS OF MANUFACTURING SAME
摘要:
A light emitting diode structure and methods of manufacturing the same are disclosed. In an example, a light emitting diode structure includes a crystalline substrate having a thickness that is greater than or equal to about 250 μm, wherein the crystalline substrate has a first roughened surface and a second roughened surface, the second roughened surface being opposite the first roughened surface; a plurality of epitaxy layers disposed over the first roughened surface, the plurality of epitaxy layers being configured as a light emitting diode; and another substrate bonded to the crystalline substrate such that the plurality of epitaxy layers are disposed between the another substrate and the first roughened surface of the crystalline substrate.
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