发明申请
US20130140592A1 LIGHT EMITTING DIODE WITH IMPROVED LIGHT EXTRACTION EFFICIENCY AND METHODS OF MANUFACTURING SAME
审中-公开
具有改进的光提取效率的发光二极管及其制造方法
- 专利标题: LIGHT EMITTING DIODE WITH IMPROVED LIGHT EXTRACTION EFFICIENCY AND METHODS OF MANUFACTURING SAME
- 专利标题(中): 具有改进的光提取效率的发光二极管及其制造方法
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申请号: US13308784申请日: 2011-12-01
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公开(公告)号: US20130140592A1公开(公告)日: 2013-06-06
- 发明人: Yea-Chen Lee , Jung-Tang Chu , Ching-Hua Chiu , Hung-Wen Huang
- 申请人: Yea-Chen Lee , Jung-Tang Chu , Ching-Hua Chiu , Hung-Wen Huang
- 申请人地址: TW Hsin-Chu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址: TW Hsin-Chu
- 主分类号: H01L33/22
- IPC分类号: H01L33/22 ; H01L33/36
摘要:
A light emitting diode structure and methods of manufacturing the same are disclosed. In an example, a light emitting diode structure includes a crystalline substrate having a thickness that is greater than or equal to about 250 μm, wherein the crystalline substrate has a first roughened surface and a second roughened surface, the second roughened surface being opposite the first roughened surface; a plurality of epitaxy layers disposed over the first roughened surface, the plurality of epitaxy layers being configured as a light emitting diode; and another substrate bonded to the crystalline substrate such that the plurality of epitaxy layers are disposed between the another substrate and the first roughened surface of the crystalline substrate.
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