公开(公告)号：US09188288B2

公开(公告)日：2015-11-17

申请号：US13629677

申请日：2012-09-28

申请人： Hsiao-Wen Lee ,  Chi-Xiang Tseng ,  Yu-Sheng Tang ,  Jung-Tang Chu

发明人： Hsiao-Wen Lee ,  Chi-Xiang Tseng ,  Yu-Sheng Tang ,  Jung-Tang Chu

IPC分类号： H01L33/00 ,  F21K99/00 ,  H01L25/075 ,  H01L33/50 ,  F21S6/00 ,  F21Y101/02 ,  F21V29/74

CPC分类号： H01L33/50 ,  F21K9/00 ,  F21K9/90 ,  F21S6/00 ,  F21V29/74 ,  F21Y2101/00 ,  F21Y2115/10 ,  H01L25/0753 ,  H01L33/56 ,  H01L33/644 ,  H01L2924/0002 ,  H01L2924/00

摘要： A lighting apparatus includes a substrate, a plurality of light-emitting dies, a continuous encapsulation structure, and a gel. The plurality of light-emitting dies are disposed on the substrate and spaced apart from one another. The light-emitting dies each are covered with a respective individual phosphor coating conformally. The continuous encapsulation structure has a curved surface disposed over the substrate and encapsulates the light-emitting dies within. The gel is disposed between the encapsulation structure and the phosphor coating for each of the light-emitting dies. The gel contains diffuser particles. The lighting apparatus has a substantially white appearance in an off state when the plurality of light-emitting dies is turned off.

摘要翻译： 照明装置包括基板，多个发光管，连续封装结构和凝胶。 多个发光管芯设置在基板上并彼此间隔开。 发光模具各自被各自的单独的荧光粉涂层覆盖。 连续封装结构具有设置在衬底上的曲面，并将发光管封装在其内。 凝胶被布置在每个发光管芯的封装结构和荧光体涂层之间。 凝胶含有扩散粒子。 当多个发光管芯断开时，照明装置具有处于断开状态的大致白色外观。

公开(公告)号：US08546165B2

公开(公告)日：2013-10-01

申请号：US13227905

申请日：2011-09-08

申请人： Jung-Tang Chu ,  Ching-Hua Chiu ,  Hung-Wen Huang ,  Yea-Chen Lee ,  Hsing-Kuo Hsia

发明人： Jung-Tang Chu ,  Ching-Hua Chiu ,  Hung-Wen Huang ,  Yea-Chen Lee ,  Hsing-Kuo Hsia

IPC分类号： H01L21/00 ,  H01L29/20 ,  H01L33/32

CPC分类号： H01L33/32 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/0265 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/12 ,  H01L33/16 ,  H01L33/30 ,  H01L33/325

摘要： A seed layer for growing a group III-V semiconductor structure is embedded in a dielectric material on a carrier substrate. After the group III-V semiconductor structure is grown, the dielectric material is removed by wet etch to detach the carrier substrate. The group III-V semiconductor structure includes a thick gallium nitride layer of at least 100 microns or a light-emitting structure.

摘要翻译： 用于生长III-V族半导体结构的种子层嵌入在载体衬底上的电介质材料中。 在III-V族半导体结构生长之后，通过湿蚀刻去除介电材料以分离载体衬底。 III-V族半导体结构包括至少100微米的厚氮化镓层或发光结构。

公开(公告)号：US20130140592A1

公开(公告)日：2013-06-06

申请号：US13308784

申请日：2011-12-01

申请人： Yea-Chen Lee ,  Jung-Tang Chu ,  Ching-Hua Chiu ,  Hung-Wen Huang

发明人： Yea-Chen Lee ,  Jung-Tang Chu ,  Ching-Hua Chiu ,  Hung-Wen Huang

IPC分类号： H01L33/22 ,  H01L33/36

CPC分类号： H01L33/0095 ,  H01L33/22 ,  H01L2933/0091

摘要： A light emitting diode structure and methods of manufacturing the same are disclosed. In an example, a light emitting diode structure includes a crystalline substrate having a thickness that is greater than or equal to about 250 μm, wherein the crystalline substrate has a first roughened surface and a second roughened surface, the second roughened surface being opposite the first roughened surface; a plurality of epitaxy layers disposed over the first roughened surface, the plurality of epitaxy layers being configured as a light emitting diode; and another substrate bonded to the crystalline substrate such that the plurality of epitaxy layers are disposed between the another substrate and the first roughened surface of the crystalline substrate.

摘要翻译： 公开了一种发光二极管结构及其制造方法。 在一个示例中，发光二极管结构包括具有大于或等于约250μm的厚度的晶体衬底，其中所述晶体衬底具有第一粗糙表面和第二粗糙表面，所述第二粗糙表面与所述第一粗糙表面相对， 粗糙表面; 设置在所述第一粗糙表面上的多个外延层，所述多个外延层被配置为发光二极管; 以及另一衬底，其结合到所述晶体衬底，使得所述多个外延层设置在所述另一衬底和所述结晶衬底的所述第一粗糙表面之间。

公开(公告)号：US20130095581A1

公开(公告)日：2013-04-18

申请号：US13276108

申请日：2011-10-18

申请人： Yea-Chen Lee ,  Jung-Tang Chu ,  Ching-Hua Chiu ,  Hung-Wen Huang

发明人： Yea-Chen Lee ,  Jung-Tang Chu ,  Ching-Hua Chiu ,  Hung-Wen Huang

IPC分类号： H01L21/50 ,  H01L33/48

CPC分类号： H01L33/0095 ,  H01L33/0079 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2933/0033 ,  H01L2924/00

摘要： A LED die and method for bonding, dicing, and forming the LED die are disclosed. In an example, the method includes forming a LED wafer, wherein the LED wafer includes a substrate and a plurality of epitaxial layers disposed over the substrate, wherein the plurality of epitaxial layers are configured to form a LED; bonding the LED wafer to a base-board to form a LED pair; and after bonding, dicing the LED pair, wherein the dicing includes simultaneously dicing the LED wafer and the base-board, thereby forming LED dies.

摘要翻译： 公开了用于接合，切割和形成LED管芯的LED管芯和方法。 在一个示例中，该方法包括形成LED晶片，其中LED晶片包括衬底和设置在衬底上的多个外延层，其中多个外延层被配置为形成LED; 将LED晶片连接到基板以形成LED对; 在接合之后，对LED对进行切割，其中，切割包括同时切割LED晶片和基板，从而形成LED管芯。

公开(公告)号：US20120080698A1

公开(公告)日：2012-04-05

申请号：US12898500

申请日：2010-10-05

申请人： Jung-Tang Chu ,  Hsing-Kuo Hsia ,  Ching-Hua Chiu

发明人： Jung-Tang Chu ,  Hsing-Kuo Hsia ,  Ching-Hua Chiu

IPC分类号： H01L33/32 ,  H01L33/60

CPC分类号： H01L33/20 ,  H01L33/007 ,  H01L33/46

摘要： The present disclosure relates to high efficiency light emitting diode devices and methods for fabricating the same. In accordance with one or more embodiments, a light emitting diode device includes a substrate having one or more recessed features formed on a surface thereof and one or more omni-directional reflectors formed to overlie the one or more recessed features. A light emitting diode layer is formed on the surface of the substrate to overlie the omni-directional reflector. The one or more omni-directional reflectors are adapted to efficiently reflect light.

摘要翻译： 本公开涉及高效率发光二极管器件及其制造方法。 根据一个或多个实施例，发光二极管器件包括具有形成在其表面上的一个或多个凹陷特征的基底和形成为覆盖一个或多个凹陷特征的一个或多个全向反射器。 在基板的表面上形成发光二极管层以覆盖全向反射器。 一个或多个全向反射器适于有效地反射光。

公开(公告)号：US20140091329A1

公开(公告)日：2014-04-03

申请号：US13629677

申请日：2012-09-28

申请人： Hsiao-Wen Lee ,  Chi-Xiang Tseng ,  Yu-Sheng Tang ,  Jung-Tang Chu

发明人： Hsiao-Wen Lee ,  Chi-Xiang Tseng ,  Yu-Sheng Tang ,  Jung-Tang Chu

IPC分类号： H01L33/44

CPC分类号： H01L33/50 ,  F21K9/00 ,  F21K9/90 ,  F21S6/00 ,  F21V29/74 ,  F21Y2101/00 ,  F21Y2115/10 ,  H01L25/0753 ,  H01L33/56 ,  H01L33/644 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present disclosure involves a lighting instrument. The lighting instrument includes a board or substrate, for example, a printed circuit board substrate. The lighting instrument includes a plurality of light-emitting diode (LED) dies disposed on the substrate. The LED dies are spaced apart from one another. Each LED die is covered with a respective individual phosphor coating that is coated around the LED die conformally. Due at least in part to the individual phosphor coatings, the LED dies and the lighting instrument may assume a substantially white appearance in an off state. The lighting instrument also includes an encapsulation structure disposed over the substrate. The encapsulation structure may be a diffuser cap that encapsulates the light-emitting dies within. A diffuser gel fills the space between the encapsulation structure and the LED dies.

摘要翻译： 本公开涉及一种照明器具。 照明器具包括板或基板，例如印刷电路板基板。 照明器具包括设置在基板上的多个发光二极管（LED）管芯。 LED管芯彼此间隔开。 每个LED管芯被相应的单独的磷光体涂层覆盖，所述磷光体涂层被保持在LED管周围。 至少部分地由于单独的磷光体涂层，LED管芯和照明器具可能在断开状态下呈现基本上白色的外观。 照明器具还包括设置在衬底上的封装结构。 封装结构可以是将发光管封装在其内的扩散器盖。 扩散器凝胶填充封装结构和LED管芯之间的空间。

公开(公告)号：US08618564B2

公开(公告)日：2013-12-31

申请号：US12898500

申请日：2010-10-05

申请人： Jung-Tang Chu ,  Hsing-Kuo Hsia ,  Ching-Hua Chiu

发明人： Jung-Tang Chu ,  Hsing-Kuo Hsia ,  Ching-Hua Chiu

IPC分类号： H01L33/20 ,  H01L33/46

CPC分类号： H01L33/20 ,  H01L33/007 ,  H01L33/46

摘要： The present disclosure relates to high efficiency light emitting diode devices and methods for fabricating the same. In accordance with one or more embodiments, a light emitting diode device includes a substrate having one or more recessed features formed on a surface thereof and one or more omni-directional reflectors formed to overlie the one or more recessed features. A light emitting diode layer is formed on the surface of the substrate to overlie the omni-directional reflector. The one or more omni-directional reflectors are adapted to efficiently reflect light.

摘要翻译： 本公开涉及高效率发光二极管器件及其制造方法。 根据一个或多个实施例，发光二极管器件包括具有形成在其表面上的一个或多个凹陷特征的基底和形成为覆盖一个或多个凹陷特征的一个或多个全向反射器。 在基板的表面上形成发光二极管层以覆盖全向反射器。 一个或多个全向反射器适于有效地反射光。

公开(公告)号：US20120104409A1

公开(公告)日：2012-05-03

申请号：US13227905

申请日：2011-09-08

申请人： Jung-Tang CHU ,  Ching-Hua CHIU ,  Hung-Wen HUANG ,  Yea-Chen LEE ,  Hsing-Kuo HSIA

发明人： Jung-Tang CHU ,  Ching-Hua CHIU ,  Hung-Wen HUANG ,  Yea-Chen LEE ,  Hsing-Kuo HSIA

IPC分类号： H01L29/20 ,  H01L33/32

CPC分类号： H01L33/32 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/0265 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/12 ,  H01L33/16 ,  H01L33/30 ,  H01L33/325

摘要： A seed layer for growing a group III-V semiconductor structure is embedded in a dielectric material on a carrier substrate. After the group III-V semiconductor structure is grown, the dielectric material is removed by wet etch to detach the carrier substrate. The group III-V semiconductor structure includes a thick gallium nitride layer of at least 100 microns or a light-emitting structure.

摘要翻译： 用于生长III-V族半导体结构的种子层嵌入在载体衬底上的电介质材料中。 在III-V族半导体结构生长之后，通过湿蚀刻去除介电材料以分离载体衬底。 III-V族半导体结构包括至少100微米的厚氮化镓层或发光结构。