发明申请
US20130146886A1 Vertical GaN JFET with Gate Source Electrodes on Regrown Gate
有权
垂直GaN JFET与栅极源电极在Regrown Gate
- 专利标题： Vertical GaN JFET with Gate Source Electrodes on Regrown Gate
- 专利标题（中）： 垂直GaN JFET与栅极源电极在Regrown Gate
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申请号： US13315720申请日： 2011-12-09
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公开(公告)号： US20130146886A1公开(公告)日： 2013-06-13
- 发明人: Donald R. Disney , Hui Nie , Isik C. Kizilyalli , Richard J. Brown
- 申请人： Donald R. Disney , Hui Nie , Isik C. Kizilyalli , Richard J. Brown
- 申请人地址： US CA San Jose
- 专利权人： EPOWERSOFT, INC.
- 当前专利权人： EPOWERSOFT, INC.
- 当前专利权人地址： US CA San Jose
- 主分类号： H01L29/808
- IPC分类号： H01L29/808 ; H01L21/335 ; H01L29/20
摘要：
A semiconductor structure includes a GaN substrate with a first surface and a second surface. The GaN substrate is characterized by a first conductivity type and a first dopant concentration. A first electrode is electrically coupled to the second surface of the GaN substrate. The semiconductor structure further includes a first GaN epitaxial layer of the first conductivity type coupled to the first surface of the GaN substrate and a second GaN layer of a second conductivity type coupled to the first GaN epitaxial layer. The first GaN epitaxial layer comprises a channel region. The second GaN epitaxial layer comprises a gate region and an edge termination structure. A second electrode coupled to the gate region and a third electrode coupled to the channel region are both disposed within the edge termination structure.
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