发明申请
- 专利标题: INTEGRATED CIRCUIT GROUND SHIELDING STRUCTURE
- 专利标题(中): 集成电路接地屏蔽结构
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申请号: US13313240申请日: 2011-12-07
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公开(公告)号: US20130147023A1公开(公告)日: 2013-06-13
- 发明人: Yu-Ling Lin , Hsiao-Tsung Yen , Ho-Hsiang Chen , Chewn-Pu Jou
- 申请人: Yu-Ling Lin , Hsiao-Tsung Yen , Ho-Hsiang Chen , Chewn-Pu Jou
- 申请人地址: TW Hsin-Chu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址: TW Hsin-Chu
- 主分类号: H01L23/552
- IPC分类号: H01L23/552
摘要:
The present disclosure provides an Integrated Circuit (IC) device. The IC device includes a first die that contains an electronic component. The IC device includes second die that contains a ground shielding structure. The IC device includes a layer disposed between the first die and the second die. The layer couples the first die and the second die together. The present disclosure also involves a microelectronic device. The microelectronic device includes a first die that contains a plurality of first interconnect layers. An inductor coil structure is disposed in a subset of the first interconnect layers. The microelectronic device includes a second die that contains a plurality of second interconnect layers. A patterned ground shielding (PGS) structure is disposed in a subset of the second interconnect layers. The microelectronic device includes an underfill layer disposed between the first and second dies. The underfill layer contains one or more microbumps.
公开/授权文献
- US08659126B2 Integrated circuit ground shielding structure 公开/授权日:2014-02-25