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    Slot-shielded coplanar strip-line compatible with CMOS processes
    1.
    发明授权
    Slot-shielded coplanar strip-line compatible with CMOS processes 有权
    与CMOS工艺兼容的插槽屏蔽共面带状线

    公开(公告)号：US09087840B2

    公开(公告)日：2015-07-21

    申请号：US12917285

    申请日：2010-11-01

    申请人： Yu-Ling Lin ,  Hsiao-Tsung Yen ,  Ho-Hsiang Chen ,  Chin-Wei Kuo ,  Chewn-Pu Jou

    发明人： Yu-Ling Lin ,  Hsiao-Tsung Yen ,  Ho-Hsiang Chen ,  Chin-Wei Kuo ,  Chewn-Pu Jou

    IPC分类号： H01L23/14 ,  H01L23/522 ,  H01L23/66 ,  H01L27/06

    CPC分类号： H01L23/5225 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/64 ,  H01L23/66 ,  H01L27/0629 ,  H01L2223/6627 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A strip-line includes a ground plane extending through a plurality of dielectric layers over a substrate; a signal line over the substrate and on a side of the ground plane; a first plurality of metal strips under the signal line and in a first metal layer, wherein the first plurality of metal strips is parallel to each other, and is spaced apart from each other by spaces; and a second plurality of metal strips under the signal line and in a second metal layer over the first metal layer. The second plurality of metal strips vertically overlaps the spaces. The first plurality of metal strips is electrically coupled to the second plurality of metal strips through the ground plane, and no via physically contacts the first plurality of metal strips and the second plurality of metal strips.

    摘要翻译： 带状线包括在衬底上延伸穿过多个电介质层的接地平面; 在基板上并在接地平面的一侧的信号线; 在信号线下方和第一金属层中的第一多个金属条，其中所述第一多个金属条彼此平行并且彼此间隔开; 以及信号线下方的第二多个金属条，并且在第一金属层上方的第二金属层中。 第二多个金属带垂直地与空间重叠。 第一多个金属条通过接地平面电耦合到第二多个金属条，并且不通过物理地接触第一多个金属条和第二多个金属条。

    Integrated circuit ground shielding structure
    2.
    发明授权
    Integrated circuit ground shielding structure 有权
    集成电路接地屏蔽结构

    公开(公告)号：US08659126B2

    公开(公告)日：2014-02-25

    申请号：US13313240

    申请日：2011-12-07

    申请人： Yu-Ling Lin ,  Hsiao-Tsung Yen ,  Ho-Hsiang Chen ,  Chewn-Pu Jou

    发明人： Yu-Ling Lin ,  Hsiao-Tsung Yen ,  Ho-Hsiang Chen ,  Chewn-Pu Jou

    IPC分类号： H01L23/552

    CPC分类号： H01L23/5227 ,  H01L23/5225 ,  H01L23/552 ,  H01L23/585 ,  H01L23/645 ,  H01L25/16 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The present disclosure provides an Integrated Circuit (IC) device. The IC device includes a first die that contains an electronic component. The IC device includes second die that contains a ground shielding structure. The IC device includes a layer disposed between the first die and the second die. The layer couples the first die and the second die together. The present disclosure also involves a microelectronic device. The microelectronic device includes a first die that contains a plurality of first interconnect layers. An inductor coil structure is disposed in a subset of the first interconnect layers. The microelectronic device includes a second die that contains a plurality of second interconnect layers. A patterned ground shielding (PGS) structure is disposed in a subset of the second interconnect layers. The microelectronic device includes an underfill layer disposed between the first and second dies. The underfill layer contains one or more microbumps.

    摘要翻译： 本公开提供了一种集成电路（IC）装置。 IC器件包括包含电子元件的第一管芯。 IC器件包括包含接地屏蔽结构的第二管芯。 IC器件包括设置在第一管芯和第二管芯之间的层。 该层将第一管芯和第二管芯结合在一起。 本公开还涉及微电子器件。 微电子器件包括包含多个第一互连层的第一管芯。 电感线圈结构设置在第一互连层的子集中。 微电子器件包括包含多个第二互连层的第二管芯。 图案化接地屏蔽（PGS）结构设置在第二互连层的子集中。 微电子器件包括设置在第一和第二裸片之间的底部填充层。 底层填充层包含一个或多个微胶囊。

    Slot-Shielded Coplanar Strip-line Compatible with CMOS Processes
    3.
    发明申请
    Slot-Shielded Coplanar Strip-line Compatible with CMOS Processes 有权
    Slot-Shielded Coplanar Strip-line兼容CMOS工艺

    公开(公告)号：US20120104575A1

    公开(公告)日：2012-05-03

    申请号：US12917285

    申请日：2010-11-01

    申请人： Yu-Ling Lin ,  Hsiao-Tsung Yen ,  Ho-Hsiang Chen ,  Chin-Wei Kuo ,  Chewn-Pu Jou

    发明人： Yu-Ling Lin ,  Hsiao-Tsung Yen ,  Ho-Hsiang Chen ,  Chin-Wei Kuo ,  Chewn-Pu Jou

    IPC分类号： H01L23/14

    CPC分类号： H01L23/5225 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/64 ,  H01L23/66 ,  H01L27/0629 ,  H01L2223/6627 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A strip-line includes a ground plane extending through a plurality of dielectric layers over a substrate; a signal line over the substrate and on a side of the ground plane; a first plurality of metal strips under the signal line and in a first metal layer, wherein the first plurality of metal strips is parallel to each other, and is spaced apart from each other by spaces; and a second plurality of metal strips under the signal line and in a second metal layer over the first metal layer. The second plurality of metal strips vertically overlaps the spaces. The first plurality of metal strips is electrically coupled to the second plurality of metal strips through the ground plane, and no via physically contacts the first plurality of metal strips and the second plurality of metal strips.

    摘要翻译： 带状线包括在衬底上延伸穿过多个电介质层的接地平面; 在基板上并在接地平面的一侧的信号线; 在信号线下方和第一金属层中的第一多个金属条，其中所述第一多个金属条彼此平行并且彼此间隔开; 以及信号线下方的第二多个金属条，并且在第一金属层上方的第二金属层中。 第二多个金属带垂直地与空间重叠。 第一多个金属条通过接地平面电耦合到第二多个金属条，并且不通过物理地接触第一多个金属条和第二多个金属条。

    INTEGRATED CIRCUIT GROUND SHIELDING STRUCTURE
    6.
    发明申请
    INTEGRATED CIRCUIT GROUND SHIELDING STRUCTURE 有权
    集成电路接地屏蔽结构

    公开(公告)号：US20130147023A1

    公开(公告)日：2013-06-13

    申请号：US13313240

    申请日：2011-12-07

    申请人： Yu-Ling Lin ,  Hsiao-Tsung Yen ,  Ho-Hsiang Chen ,  Chewn-Pu Jou

    发明人： Yu-Ling Lin ,  Hsiao-Tsung Yen ,  Ho-Hsiang Chen ,  Chewn-Pu Jou

    IPC分类号： H01L23/552

    CPC分类号： H01L23/5227 ,  H01L23/5225 ,  H01L23/552 ,  H01L23/585 ,  H01L23/645 ,  H01L25/16 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The present disclosure provides an Integrated Circuit (IC) device. The IC device includes a first die that contains an electronic component. The IC device includes second die that contains a ground shielding structure. The IC device includes a layer disposed between the first die and the second die. The layer couples the first die and the second die together. The present disclosure also involves a microelectronic device. The microelectronic device includes a first die that contains a plurality of first interconnect layers. An inductor coil structure is disposed in a subset of the first interconnect layers. The microelectronic device includes a second die that contains a plurality of second interconnect layers. A patterned ground shielding (PGS) structure is disposed in a subset of the second interconnect layers. The microelectronic device includes an underfill layer disposed between the first and second dies. The underfill layer contains one or more microbumps.

    摘要翻译： 本公开提供了一种集成电路（IC）装置。 IC器件包括包含电子元件的第一管芯。 IC器件包括包含接地屏蔽结构的第二管芯。 IC器件包括设置在第一管芯和第二管芯之间的层。 该层将第一管芯和第二管芯结合在一起。 本公开还涉及微电子器件。 微电子器件包括包含多个第一互连层的第一管芯。 电感线圈结构设置在第一互连层的子集中。 微电子器件包括包含多个第二互连层的第二管芯。 图案化接地屏蔽（PGS）结构设置在第二互连层的子集中。 微电子器件包括设置在第一和第二裸片之间的底部填充层。 底层填充层包含一个或多个微胶囊。

    STRUCTURE AND METHOD FOR A HIGH-K TRANSFORMER WITH CAPACITIVE COUPLING
    9.
    发明申请
    STRUCTURE AND METHOD FOR A HIGH-K TRANSFORMER WITH CAPACITIVE COUPLING 有权
    具有电容耦合的高K变压器的结构和方法

    公开(公告)号：US20130099352A1

    公开(公告)日：2013-04-25

    申请号：US13280786

    申请日：2011-10-25

    申请人： Hsiao-Tsung Yen ,  Yu-Ling Lin ,  Chin-Wei Kuo ,  Ho-Hsiang Chen ,  Min-Chie Jeng

    发明人： Hsiao-Tsung Yen ,  Yu-Ling Lin ,  Chin-Wei Kuo ,  Ho-Hsiang Chen ,  Min-Chie Jeng

    IPC分类号： H01L23/48 ,  H01L21/768

    CPC分类号： H01L23/5222 ,  H01F17/0013 ,  H01L21/76805 ,  H01L21/76877 ,  H01L23/5225 ,  H01L23/5227 ,  H01L23/528 ,  H01L23/552 ,  H01L23/642 ,  H01L23/645 ,  H01L28/10 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The present disclosure provides a semiconductor device. The semiconductor device includes a semiconductor substrate having an integrated circuit (IC) device; an interconnect structure disposed on the semiconductor substrate and coupled with the IC device; and a transformer disposed on the semiconductor substrate and integrated in the interconnect structure. The transformer includes a first conductive feature; a second conductive feature inductively coupled with the first conductive feature; a third conductive feature electrically connected to the first conductive feature; and a fourth conductive feature electrically connected to the second conductive feature. The third and fourth conductive features are designed and configured to be capacitively coupled to increase a coupling coefficient of the transformer.

    摘要翻译： 本发明提供一种半导体器件。 半导体器件包括具有集成电路（IC）器件的半导体衬底; 布置在半导体衬底上并与IC器件耦合的互连结构; 以及设置在半导体衬底上并集成在互连结构中的变压器。 变压器包括第一导电特征; 与所述第一导电特征电感耦合的第二导电特征; 电连接到第一导电特征的第三导电特征; 以及电连接到第二导电特征的第四导电特征。 第三和第四导电特征被设计和配置为电容耦合以增加变压器的耦合系数。

    TRANSFORMER WITH BYPASS CAPACITOR
    10.
    发明申请
    TRANSFORMER WITH BYPASS CAPACITOR 有权
    带旁路电容器的变压器

    公开(公告)号：US20120146741A1

    公开(公告)日：2012-06-14

    申请号：US12963701

    申请日：2010-12-09

    申请人： Hsiao-Tsung YEN ,  Yu-Ling Lin ,  Ying-Ta Lu ,  Chin-Wei Kuo ,  Ho-Hsiang Chen

    发明人： Hsiao-Tsung YEN ,  Yu-Ling Lin ,  Ying-Ta Lu ,  Chin-Wei Kuo ,  Ho-Hsiang Chen

    IPC分类号： H03H7/42 ,  H01L21/00

    CPC分类号： H01L23/5227 ,  H01F17/0006 ,  H01F2017/0086 ,  H01L23/5223 ,  H01L2924/0002 ,  Y10T29/41 ,  H01L2924/00

    摘要： An electronic device comprises first, second and third inductors connected in series and formed in a metal layer over a semiconductor substrate. The first and second inductors have a mutual inductance with each other. The second and third inductors having a mutual inductance with each other. A first capacitor has a first electrode connected to a first node. The first node is conductively coupled between the first and second inductors. A second capacitor has a second electrode connected to a second node. The second node is conductively coupled between the second and third inductors.

    摘要翻译： 电子器件包括串联连接并形成在半导体衬底上的金属层中的第一，第二和第三电感器。 第一和第二电感器具有彼此的互感。 第二和第三电感器具有彼此的互感。 第一电容器具有连接到第一节点的第一电极。 第一节点电导耦合在第一和第二电感器之间。 第二电容器具有连接到第二节点的第二电极。 第二节点电导耦合在第二和第三电感器之间。