发明申请
US20130154034A1 METHOD AND SYSTEM FOR SETTING A PINNED LAYER IN A MAGNETIC TUNNELING JUNCTION
有权
用于在磁性隧道结中设置固定层的方法和系统
- 专利标题: METHOD AND SYSTEM FOR SETTING A PINNED LAYER IN A MAGNETIC TUNNELING JUNCTION
- 专利标题(中): 用于在磁性隧道结中设置固定层的方法和系统
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申请号: US13332093申请日: 2011-12-20
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公开(公告)号: US20130154034A1公开(公告)日: 2013-06-20
- 发明人: Dmytro Apalkov , Alexey Vasilyevitch Khvalkovskiy , Vladimir Nikitin , Mohamad Towfik Krounbi , Xueti Tang , Se Chung Oh , Woo Chang Lim , Jang Eun Lee , Ki Woong Kim , Kyoung Sun Kim
- 申请人: Dmytro Apalkov , Alexey Vasilyevitch Khvalkovskiy , Vladimir Nikitin , Mohamad Towfik Krounbi , Xueti Tang , Se Chung Oh , Woo Chang Lim , Jang Eun Lee , Ki Woong Kim , Kyoung Sun Kim
- 申请人地址: KR Gyeonggi-Do
- 专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址: KR Gyeonggi-Do
- 主分类号: H01L29/82
- IPC分类号: H01L29/82 ; H01L21/02
摘要:
A method and system for setting the direction of pinned layers in a magnetic junction are described. In one aspect, a magnetic field greater than the coercivity of the layers in a pinned layer but less than the coupling field between the layers is applied. In another aspect the pinned layers are switched from an anti-dual state to a dual state using a spin transfer torque current. In another aspect, a magnetic junction having a partial perpendicular anisotropy (PPMA) layer in the pinned layer is provided. In some aspects, the PPMA layer is part of a synthetic antiferromagnetic structure. In some embodiments, a decoupling layer is provided between the PPMA layer and another ferromagnetic layer in the pinned layer.
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