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    Method and system for providing a magnetic tunneling junction using thermally assisted switching
    7.
    发明授权
    Method and system for providing a magnetic tunneling junction using thermally assisted switching 有权
    使用热辅助切换提供磁隧道结的方法和系统

    公开(公告)号：US08698259B2

    公开(公告)日：2014-04-15

    申请号：US13332282

    申请日：2011-12-20

    申请人： Mohamad Towfik Krounbi ,  Dmytro Apalkov ,  Xueti Tang ,  Vladimir Nikitin

    发明人： Mohamad Towfik Krounbi ,  Dmytro Apalkov ,  Xueti Tang ,  Vladimir Nikitin

    IPC分类号： H01L27/22

    CPC分类号： H01L43/12 ,  G11C11/161 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3286 ,  H01F10/3295 ,  H01L43/08 ,  H01L43/10

    摘要： A magnetic junction is described. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, and a free layer. The magnetic junction may also include an additional nonmagnetic spacer layer and an additional pinned layer opposing the nonmagnetic spacer layer and the pinned layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The free layer is configured to be switchable using a write current passed through the magnetic junction. The free layer is also configured to be thermally stable in a quiescent state and have a reduced thermal stability due to heating from the write current being passed through the magnetic junction. In some aspects, the free layer includes at least one of a pinning layer(s) interleaved with ferromagnetic layer(s), two sets of interleaved ferromagnetic layers having different Curie temperatures, and a ferrimagnet having a saturation magnetization that increases with temperature between ferromagnetic layers.

    摘要翻译： 描述了磁连接。 磁结包括钉扎层，非磁性间隔层和自由层。 磁结还可以包括附加的非磁性间隔层和与非磁性间隔层和被钉扎层相对的附加钉扎层。 非磁性间隔层位于被钉扎层和自由层之间。 自由层被配置为可以使用通过磁结的写入电流来切换。 自由层还被配置为在静止状态下是热稳定的，并且由于来自写入电流的加热通过磁结而具有降低的热稳定性。 在一些方面，自由层包括与铁磁层交织的钉扎层，具有不同居里温度的两组交错铁磁层和具有随着温度升高的饱和磁化强度的铁磁体中的至少一个铁磁材料 层。

    METHOD AND SYSTEM FOR PROVIDING A MAGNETIC TUNNELING JUNCTION USING THERMALLY ASSISTED SWITCHING
    8.
    发明申请
    METHOD AND SYSTEM FOR PROVIDING A MAGNETIC TUNNELING JUNCTION USING THERMALLY ASSISTED SWITCHING 有权
    使用热辅助开关提供磁性隧道接头的方法和系统

    公开(公告)号：US20130154035A1

    公开(公告)日：2013-06-20

    申请号：US13332282

    申请日：2011-12-20

    申请人： Mohamad Towfik Krounbi ,  Dmytro Apalkov ,  Xueti Tang ,  Vladimir Nikitin

    发明人： Mohamad Towfik Krounbi ,  Dmytro Apalkov ,  Xueti Tang ,  Vladimir Nikitin

    IPC分类号： H01L27/22 ,  G11B5/84 ,  B05D5/12 ,  G11B5/66 ,  G11B5/673

    CPC分类号： H01L43/12 ,  G11C11/161 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3286 ,  H01F10/3295 ,  H01L43/08 ,  H01L43/10

    摘要： A magnetic junction is described. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, and a free layer. The magnetic junction may also include an additional nonmagnetic spacer layer and an additional pinned layer opposing the nonmagnetic spacer layer and the pinned layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The free layer is configured to be switchable using a write current passed through the magnetic junction. The free layer is also configured to be thermally stable in a quiescent state and have a reduced thermal stability due to heating from the write current being passed through the magnetic junction. In some aspects, the free layer includes at least one of a pinning layer(s) interleaved with ferromagnetic layer(s), two sets of interleaved ferromagnetic layers having different Curie temperatures, and a ferrimagnet having a saturation magnetization that increases with temperature between ferromagnetic layers.

    摘要翻译： 描述了磁连接。 磁结包括钉扎层，非磁性间隔层和自由层。 磁结还可以包括附加的非磁性间隔层和与非磁性间隔层和被钉扎层相对的附加钉扎层。 非磁性间隔层位于被钉扎层和自由层之间。 自由层被配置为可以使用通过磁结的写入电流来切换。 自由层还被配置为在静止状态下是热稳定的，并且由于来自写入电流的加热通过磁结而具有降低的热稳定性。 在一些方面，自由层包括与铁磁层交织的钉扎层，具有不同居里温度的两组交错铁磁层和具有随着温度升高的饱和磁化强度的铁磁体中的至少一个铁磁材料 层。

    METHOD AND SYSTEM FOR PROVIDING DUAL MAGNETIC TUNNELING JUNCTIONS USING SPIN-ORBIT INTERACTION-BASED SWITCHING AND MEMORIES UTILIZING THE DUAL MAGNETIC TUNNELING JUNCTIONS
    9.
    发明申请
    METHOD AND SYSTEM FOR PROVIDING DUAL MAGNETIC TUNNELING JUNCTIONS USING SPIN-ORBIT INTERACTION-BASED SWITCHING AND MEMORIES UTILIZING THE DUAL MAGNETIC TUNNELING JUNCTIONS 有权
    使用基于旋转相互作用的切换和使用双磁性隧道结的记忆体来提供双磁性隧道结的方法和系统

    公开(公告)号：US20140056061A1

    公开(公告)日：2014-02-27

    申请号：US13851591

    申请日：2013-03-27

    申请人： Alexey Vasilyevitch Khvalkovskiy ,  Dmytro Apalkov ,  Mohamad Towfik Krounbi

    发明人： Alexey Vasilyevitch Khvalkovskiy ,  Dmytro Apalkov ,  Mohamad Towfik Krounbi

    IPC分类号： H01L43/02 ,  G11C11/16 ,  H01L43/12

    CPC分类号： H01L43/02 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  G11C11/18 ,  H01F10/3263 ,  H01F10/3286 ,  H01F10/329 ,  H01F41/325 ,  H01L27/228 ,  H01L43/08 ,  H01L43/12

    摘要： A magnetic memory is described. The magnetic memory includes dual magnetic junctions and spin-orbit interaction (SO) active layer(s). Each dual magnetic junction includes first and second reference layers, first and second nonmagnetic spacer layers and a free layer. The free layer is magnetic and between the nonmagnetic spacer layers. The nonmagnetic spacer layers are between the corresponding reference layers and the free layer. The SO active layer(s) are adjacent to the first reference layer of each dual magnetic junction. The SO active layer(s) exert a SO torque on the first reference layer due to a current passing through the SO active layer(s) substantially perpendicular to a direction between the SO active layer(s) and the first reference layer. The first reference layer has a magnetic moment changeable by at least the SO torque. The free layer is switchable using a spin transfer write current driven through the dual magnetic junction.

    摘要翻译： 描述磁存储器。 磁存储器包括双重磁共轭和自旋轨道相互作用（SO）活性层。 每个双磁性结包括第一和第二参考层，第一和第二非磁性间隔层和自由层。 自由层是磁性的并且在非磁性间隔层之间。 非磁性间隔层位于相应的参考层和自由层之间。 SO活性层与每个双磁性结的第一参考层相邻。 SO活性层由于电流通过基本上垂直于SO活性层和第一参考层之间的方向的SO活性层而在第一参考层上施加SO转矩。 第一参考层具有可通过至少SO转矩改变的磁矩。 自由层可以使用通过双磁性结驱动的自旋转移写入电流进行切换。

    METHOD AND SYSTEM FOR PROVIDING A MAGNETIC JUNCTION CONFIGURED FOR PRECESSIONAL SWITCHING USING A BIAS STRUCTURE
    10.
    发明申请
    METHOD AND SYSTEM FOR PROVIDING A MAGNETIC JUNCTION CONFIGURED FOR PRECESSIONAL SWITCHING USING A BIAS STRUCTURE 有权
    提供使用偏置结构进行精密切换配置的磁连接的方法和系统

    公开(公告)号：US20120319221A1

    公开(公告)日：2012-12-20

    申请号：US13495830

    申请日：2012-06-13

    申请人： Dmytro Apalkov ,  Xueti Tang ,  Mohamad Towfik Krounbi ,  Vladimir Nikitin

    发明人： Dmytro Apalkov ,  Xueti Tang ,  Mohamad Towfik Krounbi ,  Vladimir Nikitin

    IPC分类号： H01L27/22 ,  H01L43/12 ,  H01L43/02

    CPC分类号： H01L43/08 ,  G11C11/161 ,  H01L27/228

    摘要： A method and system provide a magnetic junction usable in a magnetic device. The magnetic junction includes a first pinned layer having a first pinned layer magnetization, a first nonmagnetic spacer layer, and a free layer having an easy axis. The first nonmagnetic spacer layer is between the first pinned layer and the free layer. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction and such that the free layer employs precessional switching.

    摘要翻译： 一种方法和系统提供可用于磁性装置的磁结。 磁结包括具有第一固定层磁化的第一被钉扎层，第一非磁性间隔层和具有易轴的自由层。 第一非磁性间隔层位于第一被钉扎层和自由层之间。 磁结被配置为使得当写入电流通过磁结并且使得自由层采用进动切换时，自由层可在多个稳定磁状态之间切换。