Invention Application
US20130157425A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
半导体器件及其制造方法

  • Patent Title: SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
  • Patent Title (中): 半导体器件及其制造方法
  • Application No.: US13760397
    Application Date: 2013-02-06
  • Publication No.: US20130157425A1
    Publication Date: 2013-06-20
  • Inventor: Rui MORIMOTO
  • Applicant: Sony Corporation
  • Applicant Address: JP Tokyo
  • Assignee: Sony Corporation
  • Current Assignee: Sony Corporation
  • Current Assignee Address: JP Tokyo
  • Priority: JP2010-004991 20100113
  • Main IPC: H01L21/48
  • IPC: H01L21/48
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
Abstract:
A semiconductor device includes: a cooling function component including an active region made of an impurity region and formed on a surface of a semiconductor layer, an N-type gate made of a semiconductor including an N-type impurity, a P-type gate made of a semiconductor including a P-type impurity, a first metal wiring connected to the N-type gate, the P-type gate and the active region, a second metal wiring connected to the P-type gate and the N-type gate, and a heat releasing portion connected to the second metal wiring for releasing heat to the outside.
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