Invention Application
- Patent Title: SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Patent Title (中): 半导体器件及其制造方法
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Application No.: US13760397Application Date: 2013-02-06
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Publication No.: US20130157425A1Publication Date: 2013-06-20
- Inventor: Rui MORIMOTO
- Applicant: Sony Corporation
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Priority: JP2010-004991 20100113
- Main IPC: H01L21/48
- IPC: H01L21/48

Abstract:
A semiconductor device includes: a cooling function component including an active region made of an impurity region and formed on a surface of a semiconductor layer, an N-type gate made of a semiconductor including an N-type impurity, a P-type gate made of a semiconductor including a P-type impurity, a first metal wiring connected to the N-type gate, the P-type gate and the active region, a second metal wiring connected to the P-type gate and the N-type gate, and a heat releasing portion connected to the second metal wiring for releasing heat to the outside.
Information query
IPC分类: