发明申请
US20130160831A1 Reactive Sputtering of ZnS(O,H) and InS(O,H) for Use as a Buffer Layer
审中-公开
ZnS（O，H）和InS（O，H）的反应性溅射用作缓冲层
- 专利标题： Reactive Sputtering of ZnS(O,H) and InS(O,H) for Use as a Buffer Layer
- 专利标题（中）： ZnS（O，H）和InS（O，H）的反应性溅射用作缓冲层
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申请号： US13334296申请日： 2011-12-22
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公开(公告)号： US20130160831A1公开(公告)日： 2013-06-27
- 发明人: Robert Zubeck , Randy Dorn
- 申请人： Robert Zubeck , Randy Dorn
- 申请人地址： US CA Santa Clara
- 专利权人： MiaSole
- 当前专利权人： MiaSole
- 当前专利权人地址： US CA Santa Clara
- 主分类号： H01L31/032
- IPC分类号： H01L31/032 ; H01L21/66 ; H01L31/0224 ; H01L31/18
摘要：
A method of manufacturing a solar cell including providing a substrate, depositing a first electrode over the substrate and depositing at least one p-type semiconductor absorber layer over the first electrode. The p-type semiconductor absorber layer comprises a copper indium selenide (CIS) based alloy material. The method also includes depositing by reactive sputtering an n-type In-VI semiconductor layer over the at least one p-type semiconductor absorber layer and depositing a second electrode over the n-type In-VI semiconductor layer.
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