发明申请
- 专利标题： METHOD AND SYSTEM FOR A GAN SELF-ALIGNED VERTICAL MESFET
- 专利标题（中）： 用于GAN自对准垂直MESFET的方法和系统
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申请号： US13335572申请日： 2011-12-22
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公开(公告)号： US20130161635A1公开(公告)日： 2013-06-27
- 发明人: Richard J. Brown , Isik C. Kizilyalli , Hui Nie , Andrew P. Edwards , David P. Bour
- 申请人： Richard J. Brown , Isik C. Kizilyalli , Hui Nie , Andrew P. Edwards , David P. Bour
- 申请人地址： US CA San Jose
- 专利权人： EPOWERSOFT, INC.
- 当前专利权人： EPOWERSOFT, INC.
- 当前专利权人地址： US CA San Jose
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/338
摘要：
A semiconductor structure includes a III-nitride substrate and a drift region coupled to the III-nitride substrate along a growth direction. The semiconductor substrate also includes a channel region coupled to the drift region. The channel region is defined by a channel sidewall disposed substantially along the growth direction. The semiconductor substrate further includes a gate region disposed laterally with respect to the channel region.
公开/授权文献
- US08866147B2 Method and system for a GaN self-aligned vertical MESFET 公开/授权日：2014-10-21
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