发明申请
- 专利标题： THIN HETEREOSTRUCTURE CHANNEL DEVICE
- 专利标题（中）： 薄型结构通道设备
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申请号： US13607875申请日： 2012-09-10
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公开(公告)号： US20130161694A1公开(公告)日： 2013-06-27
- 发明人: Thomas N. Adam , Kangguo Cheng , Hong He , Ali Khakifirooz , Alexander Reznicek
- 申请人： Thomas N. Adam , Kangguo Cheng , Hong He , Ali Khakifirooz , Alexander Reznicek
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238 ; H01L29/78 ; H01L27/12
摘要：
A method of fabricating a semiconductor device that includes providing a substrate having at least a first semiconductor layer atop a dielectric layer, wherein the first semiconductor layer has a first thickness of less than 10 nm. The first semiconductor layer is etched with a halide based gas at a temperature of less than 675° C. to a second thickness that is less than the first thickness. A second semiconductor layer is epitaxially formed on an etched surface of the first semiconductor layer. A gate structure is formed directly on the second semiconductor layer. A source region and a drain region is formed on opposing sides of the gate structure.
公开/授权文献
- US09093260B2 Thin hetereostructure channel device 公开/授权日：2015-07-28
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