- 专利标题： GATE ELECTRODE HAVING A CAPPING LAYER
-
申请号： US13770767申请日： 2013-02-19
-
公开(公告)号： US20130161766A1公开(公告)日： 2013-06-27
- 发明人: Gilbert Dewey , Mark L. Doczy , Suman Datta , Justin K. Brask , Matthew V. Metz
- 申请人： Gilbert Dewey , Mark L. Doczy , Suman Datta , Justin K. Brask , Matthew V. Metz
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
A method of manufacturing a semiconductor device and a novel semiconductor device are disclosed herein. An exemplary method includes sputtering a capping layer in-situ on a gate dielectric layer, before any high temperature processing steps are performed.
公开/授权文献
- US08803255B2 Gate electrode having a capping layer 公开/授权日：2014-08-12
信息查询
IPC分类:
