Magnetoelectric memory element comprising: a magnetic element (ELM) that has two equilibrium directions (P1, P2) in which its magnetization is stable, these direction not being mutually opposed; a piezoelectric or electrostrictive substrate (SP) mechanically coupled to said magnetic element; and a least a first electrode (EL1) and a second electrode (EL2), arranged so as to apply an electric field to the piezoelectric or electrostrictive substrate such that said substrate exerts on said magnetic element a non-isotropic mechanical stress, able to induce switching of the magnetization state of said magnetic element by magnetostrictive coupling. Memory cell comprising such a memory element. Direct-access non-volatile memory and programmable logic circuit comprising a plurality of such memory cells.