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    MAGNETOELECTRIC MEMORY
    1.
    发明申请
    MAGNETOELECTRIC MEMORY 有权
    磁电记忆体

    公开(公告)号：US20130163313A1

    公开(公告)日：2013-06-27

    申请号：US13704850

    申请日：2011-06-16

    申请人： Nicolas Tiercelin ,  Yannick Dusch ,  Philippe Jacques Pernod ,  Vladimir Preobrazhensky

    发明人： Nicolas Tiercelin ,  Yannick Dusch ,  Philippe Jacques Pernod ,  Vladimir Preobrazhensky

    IPC分类号： G11C11/14

    CPC分类号： G11C11/14 ,  G11C11/16 ,  G11C11/161 ,  G11C11/165 ,  G11C11/1675 ,  G11C11/2275 ,  G11C11/5607 ,  H01L27/20

    摘要： Magnetoelectric memory element comprising: a magnetic element (ELM) that has two equilibrium directions (P1, P2) in which its magnetization is stable, these direction not being mutually opposed; a piezoelectric or electrostrictive substrate (SP) mechanically coupled to said magnetic element; and a least a first electrode (EL1) and a second electrode (EL2), arranged so as to apply an electric field to the piezoelectric or electrostrictive substrate such that said substrate exerts on said magnetic element a non-isotropic mechanical stress, able to induce switching of the magnetization state of said magnetic element by magnetostrictive coupling. Memory cell comprising such a memory element. Direct-access non-volatile memory and programmable logic circuit comprising a plurality of such memory cells.

    摘要翻译： 磁电存储元件包括：具有两个平衡方向（P1，P2）的磁性元件（ELM），其磁化稳定，这些方向不相互相对; 机械耦合到所述磁性元件的压电或电致伸缩衬底（SP）; 以及至少第一电极（EL1）和第二电极（EL2），其布置成向压电或电致伸缩基板施加电场，使得所述基板对所述磁性元件施加非均质机械应力，能够诱导 通过磁致伸缩耦合切换所述磁性元件的磁化状态。 包含这种存储元件的存储单元。 包括多个这样的存储单元的直接访问非易失性存储器和可编程逻辑电路。

    Magnetoelectric memory
    2.
    发明授权
    Magnetoelectric memory 有权
    磁电存储器

    公开(公告)号：US08908422B2

    公开(公告)日：2014-12-09

    申请号：US13704850

    申请日：2011-06-16

    申请人： Nicolas Tiercelin ,  Yannick Dusch ,  Philippe Jacques Pernod ,  Vladimir Preobrazhensky

    发明人： Nicolas Tiercelin ,  Yannick Dusch ,  Philippe Jacques Pernod ,  Vladimir Preobrazhensky

    IPC分类号： G11C11/00 ,  G11C11/14 ,  G11C11/15 ,  G11C11/56 ,  G11C11/16 ,  H01L27/20

    CPC分类号： G11C11/14 ,  G11C11/16 ,  G11C11/161 ,  G11C11/165 ,  G11C11/1675 ,  G11C11/2275 ,  G11C11/5607 ,  H01L27/20

    摘要： A magnetoelectric memory element includes a magnetic element having an easy magnetization axis aligned along a first axis, means for applying to the magnetic element a magnetic polarization field aligned along a second axis not parallel to the first axis, a piezoelectric or electrostrictive substrate mechanically coupled with the magnetic element, and first and second electrodes arranged to apply an electrical field to the substrate so that the substrate exerts, on said magnetic element, a non-isotropic mechanical stress of a main direction generally oriented along a distinct third axis coplanar with the first and second axes. The magnetic element exhibits, by a combined effect of the magnetic polarization field and the easy magnetization axis, two distinct states of stable equilibrium of magnetization, corresponding to two not mutually opposed magnetization directions. The non-isotropic mechanical stress is sufficiently intense to induce a switchover between the two distinct states.

    摘要翻译： 磁电存储元件包括具有沿着第一轴对准的容易磁化轴的磁性元件，用于向磁性元件施加沿着不平行于第一轴线的第二轴对准的磁极化场的装置，与第一轴不平行的压电或电致伸缩衬底， 所述磁性元件以及布置成向所述基板施加电场的第一和第二电极，使得所述基板在所述磁性元件上施加主方向的非各向异性机械应力，所述主方向通常沿着与第一 和第二轴。 磁性元件通过磁极化场和容易磁化轴的组合效应表现出两个不同的磁化平衡平衡状态，对应于两个不相互相反的磁化方向。 非均质机械应力足够强烈以引起两种不同状态之间的切换。