发明申请
- 专利标题： INDUCTOR STRUCTURES FOR INTEGRATED CIRCUIT DEVICES
- 专利标题（中）： 集成电路设备的电感结构
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申请号： US13764808申请日： 2013-02-12
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公开(公告)号： US20130164904A1公开(公告)日： 2013-06-27
- 发明人: David M. Smith , Jeffrey A. Schlang
- 申请人： HARRIS CORPORATION
- 申请人地址： US FL Melbourne
- 专利权人： HARRIS CORPORATION
- 当前专利权人： HARRIS CORPORATION
- 当前专利权人地址： US FL Melbourne
- 主分类号： H01L49/02
- IPC分类号： H01L49/02
摘要：
An IC device (100) includes an IC body (106) having a base layer (108) and first and second upper layers (114, 116) on the base layer. The IC body includes a cavity region (104) extending through said base and first upper layers and at least a portion of said second upper layer. In the IC device, a portion of said second upper layer in the cavity region comprises a planar inductive element (102) having first and second contacting ends (140, 142). In the IC device, at least one support member (128, 130, 132) extends at least partially into said cavity region from said IC body in at least a first direction parallel to said base layer and intersects at least a portion of said planar inductive element.
公开/授权文献
- US08722443B2 Inductor structures for integrated circuit devices 公开/授权日：2014-05-13
信息查询
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