INDUCTOR STRUCTURES FOR INTEGRATED CIRCUIT DEVICES
    1.
    发明申请
    INDUCTOR STRUCTURES FOR INTEGRATED CIRCUIT DEVICES 有权
    集成电路设备的电感结构

    公开(公告)号:US20130164904A1

    公开(公告)日:2013-06-27

    申请号:US13764808

    申请日:2013-02-12

    IPC分类号: H01L49/02

    摘要: An IC device (100) includes an IC body (106) having a base layer (108) and first and second upper layers (114, 116) on the base layer. The IC body includes a cavity region (104) extending through said base and first upper layers and at least a portion of said second upper layer. In the IC device, a portion of said second upper layer in the cavity region comprises a planar inductive element (102) having first and second contacting ends (140, 142). In the IC device, at least one support member (128, 130, 132) extends at least partially into said cavity region from said IC body in at least a first direction parallel to said base layer and intersects at least a portion of said planar inductive element.

    摘要翻译: IC器件(100)包括在基底层上具有基底层(108)和第一和第二上层(114,116)的IC体(106)。 IC体包括延伸穿过所述基底和第一上层以及所述第二上层的至少一部分的腔区(104)。 在IC器件中,空腔区域中的所述第二上层的一部分包括具有第一和第二接触端(140,142)的平面感应元件(102)。 在所述IC器件中,至少一个支撑部件(128,130,132)至少部分地在平行于所述基底层的至少第一方向上从所述IC体延伸到所述腔体区域中,并与所述平面感应 元件。

    Inductor structures for integrated circuit devices
    3.
    发明授权
    Inductor structures for integrated circuit devices 有权
    集成电路器件的电感结构

    公开(公告)号:US08722443B2

    公开(公告)日:2014-05-13

    申请号:US13764808

    申请日:2013-02-12

    IPC分类号: H01L21/00

    摘要: An IC device (100) includes an IC body (106) having a base layer (108) and first and second upper layers (114, 116) on the base layer. The IC body includes a cavity region (104) extending through said base and first upper layers and at least a portion of said second upper layer. In the IC device, a portion of said second upper layer in the cavity region comprises a planar inductive element (102) having first and second contacting ends (140, 142). In the IC device, at least one support member (128, 130, 132) extends at least partially into said cavity region from said IC body in at least a first direction parallel to said base layer and intersects at least a portion of said planar inductive element.

    摘要翻译: IC器件(100)包括在基底层上具有基底层(108)和第一和第二上层(114,116)的IC体(106)。 IC体包括延伸穿过所述基底和第一上层以及所述第二上层的至少一部分的腔区(104)。 在IC器件中,空腔区域中的所述第二上层的一部分包括具有第一和第二接触端(140,142)的平面感应元件(102)。 在所述IC器件中,至少一个支撑部件(128,130,132)至少部分地在平行于所述基底层的至少第一方向上从所述IC体延伸到所述腔体区域中,并与所述平面感应 元件。