Invention Application
- Patent Title: MULTI-ENERGY RADIATION DETECTORS AND METHODS OF MANUFACTURING THE SAME
- Patent Title (中): 多功能辐射探测器及其制造方法
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Application No.: US13728013Application Date: 2012-12-27
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Publication No.: US20130168563A1Publication Date: 2013-07-04
- Inventor: Sun-il KIM , Jae-chul PARK , Sang-wook KIM , Chang-jung KIM
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-Si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-Si
- Priority: KR1020110145018 20111228
- Main IPC: G01T1/16
- IPC: G01T1/16 ; H01L31/18

Abstract:
A multi-energy radiation detector may include an array substrate including a plurality of unit circuits, and/or a photoelectric conversion layer on the array substrate. The photoelectric conversion layer may include a plurality of regions having thicknesses different from each other. A method of manufacturing a multi-energy radiation detector may include forming gate and first electrodes by forming and patterning a first metal layer on a substrate; forming an insulating layer on the gate and first electrodes; forming a channel layer by forming and patterning a semiconductor layer on the insulating layer; forming source, drain, and second electrodes by forming and patterning a second metal layer on the channel layer; forming a passivation layer to cover the source, drain, and second electrodes; forming a first photoelectric conversion layer on the passivation layer; and/or forming a second photoelectric conversion layer on part of the first photoelectric conversion layer.
Public/Granted literature
- US09158003B2 Multi-energy radiation detectors and methods of manufacturing the same Public/Granted day:2015-10-13
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