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    DIGITAL SILICON PHOTOMULTIPLIER DETECTOR CELLS
    2.
    发明申请
    DIGITAL SILICON PHOTOMULTIPLIER DETECTOR CELLS 有权
    数字硅光电探测器电池

    公开(公告)号：US20140210035A1

    公开(公告)日：2014-07-31

    申请号：US14017787

    申请日：2013-09-04

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jae-chul PARK ,  Young KIM ,  Chae-hun LEE ,  Yong-woo JEON ,  Chang-jung KIM

    IPC: H01L31/105

    CPC classification number: H01L31/105 ,  G01T1/2018 ,  G01T1/208 ,  H01L27/1446 ,  H01L27/14658 ,  H01L31/103 ,  H01L31/107

    Abstract: A silicon photomultiplier detector cell may include a photodiode region and a readout circuit region formed on a same substrate. The photodiode region may include a first semiconductor layer exposed on a surface of the silicon photomultiplier detector cell and doped with first type impurities; a second semiconductor layer doped with second type impurities; and/or a first epitaxial layer between the first semiconductor layer and the second semiconductor layer. The first epitaxial layer may contact the first semiconductor layer and the second semiconductor layer. The first epitaxial layer may be doped with the first type impurities at a concentration lower than a concentration of the first type impurities of the first semiconductor layer.

    Abstract translation: 硅光电倍增管检测器单元可以包括形成在同一衬底上的光电二极管区域和读出电路区域。 光电二极管区域可以包括暴露在硅光电倍增管检测器单元的表面上并掺杂有第一类型杂质的第一半导体层; 掺杂有第二类型杂质的第二半导体层; 和/或在第一半导体层和第二半导体层之间的第一外延层。 第一外延层可以接触第一半导体层和第二半导体层。 第一外延层可以以低于第一半导体层的第一类型杂质的浓度的浓度掺杂第一类型的杂质。

    COLOR OPTICAL PEN FOR ELECTRONIC PANEL
    3.
    发明申请
    COLOR OPTICAL PEN FOR ELECTRONIC PANEL 有权
    彩色光电笔用于电子面板

    公开(公告)号：US20140133134A1

    公开(公告)日：2014-05-15

    申请号：US13924944

    申请日：2013-06-24

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Chang-jung KIM ,  In-kyeong YOO ,  U-in CHUNG ,  I-hun SONG ,  Seung-eon AHN

    IPC: F21V23/00

    CPC classification number: F21V23/009 ,  G06F3/03545

    Abstract: A color optical pen includes a tip unit, a pen body unit attached to the tip unit; a pressure sensor that is disposed in the tip unit and configured to sense at least contact between a display unit of a terminal device and the tip unit; a light source that is disposed in the pen body unit and is configured to output light through the tip unit, if the pressure sensor senses the contact; a color selection switch that is disposed on the pen body, the color selection switch configured to select a color in response to operation by a user; and a driver configured to drive the light source at a frequency or pattern based on operation of the color selection switch.

    Abstract translation: 彩色光笔包括尖端单元，附接到尖端单元的笔体单元; 压力传感器，其布置在所述尖端单元中并且构造成感测终端装置的显示单元和所述尖端单元之间的至少接触; 光源，其设置在所述笔体单元中，并且被配置为如果所述压力传感器感测到所述接触，则通过所述尖端单元输出光; 布置在笔体上的颜色选择开关，所述颜色选择开关被配置为响应于用户的操作来选择颜色; 以及配置为基于颜色选择开关的操作以频率或图案驱动光源的驱动器。

    CAPACITIVE MICROMACHINED ULTRASONIC TRANSDUCER AND METHOD OF FABRICATING THE SAME
    4.
    发明申请
    CAPACITIVE MICROMACHINED ULTRASONIC TRANSDUCER AND METHOD OF FABRICATING THE SAME 有权
    电容式MICROMACHINED超声波传感器及其制造方法

    公开(公告)号：US20150137285A1

    公开(公告)日：2015-05-21

    申请号：US14286460

    申请日：2014-05-23

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Dong-sik SHIM ,  Seog-woo HONG ,  Seok-whan CHUNG ,  Chang-jung KIM

    IPC: B81B7/00 ,  B81C1/00

    CPC classification number: B81B7/007 ,  B06B1/0292 ,  B81C1/00301

    Abstract: A capacitive micromachined ultrasonic transducer and a method of fabricating the same are provided. The capacitive micromachined ultrasonic transducer includes a device substrate including a first trench defining a plurality of first portions corresponding to an element and a second trench spaced apart from the first trench; a supporting unit provided on the device substrate, the supporting unit defining a plurality of cavities; a membrane provided on the supporting unit to cover the plurality of cavities; a top electrode electrically connected to a second portion in the second trench through a via hole penetrating through the membrane and the supporting unit; and a through silicon via (TSV) substrate provided on a bottom surface of the device substrate, the TSV substrate including a first via metal connected to the plurality of first portions corresponding to the element and a second via metal connected to the second portion.

    Abstract translation: 提供了一种电容微加工超声波换能器及其制造方法。 电容微加工超声波换能器包括：器件基板，其包括限定对应于元件的多个第一部分的第一沟槽和与第一沟槽间隔开的第二沟槽; 设置在所述装置基板上的支撑单元，所述支撑单元限定多个空腔; 设置在所述支撑单元上以覆盖所述多个空腔的膜; 顶部电极，其通过穿过所述膜的通孔和所述支撑单元电连接到所述第二沟槽中的第二部分; 以及设置在器件基板的底面上的贯穿硅通孔（TSV）基板，所述TSV基板包括连接到与所述元件相对应的所述多个第一部分的第一通孔金属和连接到所述第二部分的第二通孔金属。

    MEMORY DEVICE AND APPARATUS INCLUDING THE SAME
    7.
    发明申请
    MEMORY DEVICE AND APPARATUS INCLUDING THE SAME 有权
    存储器件和装置，包括它们

    公开(公告)号：US20140246643A1

    公开(公告)日：2014-09-04

    申请号：US14192371

    申请日：2014-02-27

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Young-bae KIM ,  Kyung-min KIM ,  Sung-ho KIM ,  Seung-ryul LEE ,  Man CHANG ,  Eun-ju CHO ,  Sae-jin KIM ,  Chang-jung KIM

    IPC: H01L27/24

    CPC classification number: H01L27/2481 ,  H01L27/2409 ,  H01L27/2436 ,  H01L27/249 ,  H01L45/04 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/146

    Abstract: A memory device may include a first electrode and a second electrode spaced apart from the first electrode. The memory device may further include a memory element disposed between the first electrode and the second electrode and a switching element disposed between the first electrode and the second electrode. The switching element may be configured to control signal access to the memory element. The memory device may further include a barrier layer disposed between the memory element and the switching element, the barrier layer including an insulation material.

    Abstract translation: 存储器件可以包括与第一电极间隔开的第一电极和第二电极。 存储器件还可以包括设置在第一电极和第二电极之间的存储元件和设置在第一电极和第二电极之间的开关元件。 开关元件可以被配置为控制对存储器元件的信号访问。 存储器件还可以包括设置在存储器元件和开关元件之间的阻挡层，阻挡层包括绝缘材料。

    PHOTON-COUNTING DETECTOR AND READOUT CIRCUIT
    8.
    发明申请
    PHOTON-COUNTING DETECTOR AND READOUT CIRCUIT 有权
    光电计数检测器和读出电路

    公开(公告)号：US20140158900A1

    公开(公告)日：2014-06-12

    申请号：US14102744

    申请日：2013-12-11

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Dae-kun YOON ,  Chang-jung KIM

    IPC: G01T1/17 ,  H03K21/02

    CPC classification number: G01T1/17 ,  G01T1/247 ,  G01T1/2928 ,  H03K21/026 ,  H04N5/32

    Abstract: A photon-counting detector configured to detect photons included in multi-energy radiation. The photon-counting detector includes a pixel area configured to absorb photons incident thereto, and bias circuits configured to supply one of a bias voltage and a bias current to electronic devices in the pixel area, wherein the bias circuits are in the pixel area.

    Abstract translation: 一种被配置为检测包括在多能辐射中的光子的光子计数检测器。 光子计数检测器包括被配置为吸收入射到其上的光子的像素区域，以及被配置为向像素区域中的电子器件提供偏置电压和偏置电流中的一个的偏置电路，其中偏置电路在像素区域中。

    DISPLAY APPARATUSES AND METHODS OF OPERATING THE SAME
    9.
    发明申请
    DISPLAY APPARATUSES AND METHODS OF OPERATING THE SAME 审中-公开
    显示装置及其操作方法

    公开(公告)号：US20140071367A1

    公开(公告)日：2014-03-13

    申请号：US14082584

    申请日：2013-11-18

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Sung-hoon LEE ,  Do-Hyun KIM ,  Sang-wook KIM ,  Chang-jung KIM

    IPC: G02F1/1368

    CPC classification number: G02F1/1368 ,  G09G3/3648 ,  G09G2330/027

    Abstract: Provided are display apparatuses and methods of operating the same. In a display apparatus, a display image may be continuously held for longer than about 10 msec after the power of the display panel is turned off. The display apparatus may indicate a liquid crystal display (LCD) apparatus including an oxide thin film transistor (TFT). Off leakage current of the oxide TFT may be less than about 10−14 A.

    Abstract translation: 提供了显示装置及其操作方法。 在显示装置中，在显示面板的电源关闭之后，显示图像可以连续保持超过约10毫秒。 显示装置可以指示包括氧化物薄膜晶体管（TFT）的液晶显示器（LCD）装置。 氧化物TFT的漏电流可以小于约10-14A。

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