发明申请
- 专利标题： RESISTANCE VARIABLE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME
- 专利标题（中）： 电阻可变存储器件及其制造方法
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申请号： US13596807申请日： 2012-08-28
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公开(公告)号： US20130168632A1公开(公告)日： 2013-07-04
- 发明人: Ji-Won MOON , Moon-Sig JOO , Sung-Hoon LEE , Jung-Nam Kim
- 申请人： Ji-Won MOON , Moon-Sig JOO , Sung-Hoon LEE , Jung-Nam Kim
- 优先权： KR10-2011-0146243 20111229
- 主分类号： H01L45/00
- IPC分类号： H01L45/00 ; H01L21/02 ; B82Y10/00
摘要：
A resistance variable memory device includes: a first electrode; a second electrode; a resistance variable layer interposed between the first electrode and the second electrode; and nano particles that are disposed in the resistance variable layer and have a lower dielectric constant than the resistance variable layer.
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