发明申请
US20130168833A1 METHOD FOR ENHANCING GROWTH OF SEMIPOLAR (Al,In,Ga,B)N VIA METALORGANIC CHEMICAL VAPOR DEPOSITION
审中-公开
用于增强二氧化硅生长的方法（Al，In，Ga，B）N通过金属化学气相沉积
- 专利标题： METHOD FOR ENHANCING GROWTH OF SEMIPOLAR (Al,In,Ga,B)N VIA METALORGANIC CHEMICAL VAPOR DEPOSITION
- 专利标题（中）： 用于增强二氧化硅生长的方法（Al，In，Ga，B）N通过金属化学气相沉积
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申请号： US13776446申请日： 2013-02-25
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公开(公告)号： US20130168833A1公开(公告)日： 2013-07-04
- 发明人: Hitoshi Sato , John F. Kaeding , Michael Iza , Benjamin A. Haskell , Troy J. Baker , Steven P. DenBaars , Shuji Nakamura
- 申请人： Hitoshi Sato , John F. Kaeding , Michael Iza , Benjamin A. Haskell , Troy J. Baker , Steven P. DenBaars , Shuji Nakamura
- 主分类号： H01L29/04
- IPC分类号： H01L29/04 ; H01L21/02
摘要：
A method for enhancing growth of device-quality planar semipolar nitride semiconductor thin films via metalorganic chemical vapor deposition (MOCVD) by using an (Al,In,Ga)N nucleation layer containing at least some indium. Specifically, the method comprises loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InxGa1-xN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InxGa1-xN nucleation layer, and cooling the substrate under a nitrogen overpressure.
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