公开(公告)号：US10799532B2

公开(公告)日：2020-10-13

申请号：US15373731

申请日：2016-12-09

申请人： Yoshio Ichikawa ,  Taro Shirakawa ,  Hitoshi Sato

发明人： Yoshio Ichikawa ,  Taro Shirakawa ,  Hitoshi Sato

IPC分类号： A61K33/38 ,  A61K33/242 ,  A61K9/00 ,  A61K9/08 ,  A61K9/10 ,  A61K33/243 ,  A61K33/24

摘要： To obtain a lifestyle-related disease therapeutic water which comprises a very small amount of anionized silver, nanosized gold, and 99.9% or more of water. A lifestyle-related disease therapeutic water comprising with respect to one liter of water (a), 3-15 mg in silver equivalent of thiosulfate silver ion (b), and 0.1-0.5 mg in gold equivalent of colloidal gold (c).

公开(公告)号：US08891054B2

公开(公告)日：2014-11-18

申请号：US13325185

申请日：2011-12-14

申请人： Hitoshi Sato ,  Yasuhito Sasaki ,  Keiji Emoto

发明人： Hitoshi Sato ,  Yasuhito Sasaki ,  Keiji Emoto

IPC分类号： G03B27/32 ,  G03B27/42 ,  G03B27/52 ,  G03B27/58 ,  G03B27/62 ,  H02K41/02 ,  G03F7/20

CPC分类号： G03F7/70858 ,  G03F7/70725

摘要： A stage device includes a base and a stage movable portion that is movable along a surface of the base. An interferometer measures a position of the stage movable portion using measurement light. At least one of a piping element and a wiring element are connected to the stage movable portion. An auxiliary member, including a plurality of members connected with each other along an axial direction of the piping element, guides a bend of the at least one of the piping element and the wiring element. A plurality of heat insulating sheets are supported by the plurality of members of the auxiliary member. The plurality of heat insulating sheets are provided between a space through which the measurement light of the interferometer passes, and the at least one of the piping element and the wiring element.

摘要翻译： 舞台装置包括可沿基座的表面移动的基座和台可动部分。 干涉仪使用测量光来测量舞台可动部分的位置。 管道元件和配线元件中的至少一个连接到台可动部。 辅助构件包括沿着管道元件的轴向彼此连接的多个构件，引导管道元件和布线元件中的至少一个的弯曲部。 多个绝热片由辅助构件的多个构件支撑。 多个绝热片设置在干涉仪的测量光通过的空间与管道元件和布线元件中的至少一个之间。

公开(公告)号：US08709925B2

公开(公告)日：2014-04-29

申请号：US13440234

申请日：2012-04-05

申请人： John F. Kaeding ,  Hitoshi Sato ,  Michael Iza ,  Hirokuni Asamizu ,  Hong Zhong ,  Steven P. DenBaars ,  Shuji Nakamura

发明人： John F. Kaeding ,  Hitoshi Sato ,  Michael Iza ,  Hirokuni Asamizu ,  Hong Zhong ,  Steven P. DenBaars ,  Shuji Nakamura

IPC分类号： H01L21/04

CPC分类号： H01L21/2654 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/02609 ,  H01L21/0262 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/207

摘要： A method of controlled p-type conductivity in (Al,In,Ga,B)N semiconductor crystals. Examples include {10 11} GaN films deposited on {100} MgAl2O4 spinel substrate miscut in the direction. Mg atoms may be intentionally incorporated in the growing semipolar nitride thin film to introduce available electronic states in the band structure of the semiconductor crystal, resulting in p-type conductivity. Other impurity atoms, such as Zn or C, which result in a similar introduction of suitable electronic states, may also be used.

摘要翻译： （Al，In，Ga，B）N半导体晶体中受控p型导电性的方法。 实例包括在{011}方向沉积在{100} MgAl 2 O 4尖晶石衬底miscut上的{10 11} GaN膜。 可以有意地将Mg原子并入生长的半极性氮化物薄膜中以在半导体晶体的带结构中引入可用的电子态，导致p型导电性。 也可以使用导致类似的合适电子状态引入的其它杂质原子，例如Zn或C。

公开(公告)号：US08651002B2

公开(公告)日：2014-02-18

申请号：US12440834

申请日：2007-09-10

申请人： Hitoshi Sato

发明人： Hitoshi Sato

IPC分类号： B26D1/00 ,  B26D5/08 ,  B27B3/00 ,  B27B13/00 ,  B26D5/20

CPC分类号： B26D1/085 ,  B26D7/2628 ,  B26D2001/0066 ,  B26D2007/2685 ,  Y10T83/8776 ,  Y10T83/8818 ,  Y10T83/8854 ,  Y10T83/888 ,  Y10T83/8887 ,  Y10T83/9447

摘要： A sheet cutter includes: a stationary knife including a straight blade part formed in a straight-line shape in a longitudinal direction; a movable knife including a cutting edge part formed in the shape of V-character, opposed to mesh with the straight blade part of the stationary knife, the movable knife being able to freely move toward or back from the stationary knife; a movable knife pressing member for pressing the movable knife against the stationary knife; and a movable knife driver driving the movable knife forward or backward. The movable knife pressing member pressure contacts the movable knife against the stationary knife by a compression coil spring contained inside the movable knife pressing member.

摘要翻译： 片式切割机包括：固定刀，其包括在纵向方向上形成为直线形状的直刃部; 可动刀，其包括形成为V字形形状的切割刃部，与所述固定刀的直刃部相对置，所述可动刀能够朝向所述固定刀自由移动; 用于将可动刀压靠在固定刀上的可动刀按压部件; 以及向前或向后驱动可动刀的可动刀驱动器。 可动刀按压部件压力通过容纳在可动刀按压部件内的压缩螺旋弹簧与可动刀片抵靠固定刀片接触。

公开(公告)号：US08368179B2

公开(公告)日：2013-02-05

申请号：US13311986

申请日：2011-12-06

申请人： John F. Kaeding ,  Dong-Seon Lee ,  Michael Iza ,  Troy J. Baker ,  Hitoshi Sato ,  Benjamin A. Haskell ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

发明人： John F. Kaeding ,  Dong-Seon Lee ,  Michael Iza ,  Troy J. Baker ,  Hitoshi Sato ,  Benjamin A. Haskell ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

IPC分类号： H01L29/20

CPC分类号： H01L21/02433 ,  C30B23/025 ,  C30B25/02 ,  C30B25/18 ,  C30B25/183 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02378 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007

摘要： A method for improved growth of a semipolar (Al,In,Ga,B)N semiconductor thin film using an intentionally miscut substrate. Specifically, the method comprises intentionally miscutting a substrate, loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InxGa1-xN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InxGa1-xN nucleation layer, and cooling the substrate under a nitrogen overpressure.

摘要翻译： 使用有意识的基板改善半极性（Al，In，Ga，B）N半导体薄膜生长的方法。 具体地说，该方法包括有意地将基板，基板加载到反应器中，在氮气和/或氢气和/或氨气流下加热基板，在加热的基板上沉积In x Ga 1-x N成核层，沉积半极性氮化物 半导体薄膜在InxGa1-xN成核层上，并在氮气过压下冷却衬底。

公开(公告)号：US08368109B2

公开(公告)日：2013-02-05

申请号：US13296611

申请日：2011-11-15

申请人： Kenji Iso ,  Hirokuni Asamizu ,  Makoto Saito ,  Hitoshi Sato ,  Steven P. DenBaars ,  Shuji Nakamura

发明人： Kenji Iso ,  Hirokuni Asamizu ,  Makoto Saito ,  Hitoshi Sato ,  Steven P. DenBaars ,  Shuji Nakamura

IPC分类号： H01L33/04

CPC分类号： H01L33/0079 ,  H01L33/145 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： An (Al,Ga,In)N-based light emitting diode (LED), comprising a p-type surface of the LED bonded with a transparent submount material to increase light extraction at the p-type surface, wherein the LED is a substrateless membrane.

摘要翻译： 一种（Al，Ga，In）N基发光二极管（LED），包括与透明底层材料结合的LED的p型表面，以增加p型表面的光提取，其中LED是无基底 膜。

公开(公告)号：US20120187415A1

公开(公告)日：2012-07-26

申请号：US13440234

申请日：2012-04-05

申请人： John F. Kaeding ,  Hitoshi Sato ,  Michael Iza ,  Hirokuni Asamizu ,  Hong Zhong ,  Steven P. DenBaars ,  Shuji Nakamura

发明人： John F. Kaeding ,  Hitoshi Sato ,  Michael Iza ,  Hirokuni Asamizu ,  Hong Zhong ,  Steven P. DenBaars ,  Shuji Nakamura

IPC分类号： H01L29/207 ,  H01L21/22

CPC分类号： H01L21/2654 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/02609 ,  H01L21/0262 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/207

摘要： A method of controlled p-type conductivity in (Al,In,Ga,B)N semiconductor crystals. Examples include {10 11} GaN films deposited on {100} MgAl2O4 spinel substrate miscut in the direction. Mg atoms may be intentionally incorporated in the growing semipolar nitride thin film to introduce available electronic states in the band structure of the semiconductor crystal, resulting in p-type conductivity. Other impurity atoms, such as Zn or C, which result in a similar introduction of suitable electronic states, may also be used.

摘要翻译： （Al，In，Ga，B）N半导体晶体中受控p型导电性的方法。 实例包括在{011}方向沉积在{100} MgAl 2 O 4尖晶石衬底miscut上的{10 11} GaN膜。 可以有意地将Mg原子并入生长的半极性氮化物薄膜中以在半导体晶体的带结构中引入可用的电子态，导致p型导电性。 也可以使用导致类似的合适电子状态引入的其它杂质原子，例如Zn或C。

公开(公告)号：US20120086931A1

公开(公告)日：2012-04-12

申请号：US13325185

申请日：2011-12-14

申请人： Hitoshi Sato ,  Yasuhito Sasaki ,  Keiji Emoto

发明人： Hitoshi Sato ,  Yasuhito Sasaki ,  Keiji Emoto

IPC分类号： G03B27/62

CPC分类号： G03F7/70858 ,  G03F7/70725

摘要： A stage device that includes a base. A stage movable portion is movable along a surface of the base. An interferometer measures a position of the stage movable portion using measurement light. At least one of a piping element and a wiring element are connected to the stage movable portion. An auxiliary member, including a plurality of members connected with each other, guides a bend of at least one of the piping element and the wiring element. A heat insulating sheet is supported by the auxiliary member. The heat insulating material is provided between a space through which the measurement light of the interferometer passes, and the at least one of the piping element and the wiring element.

摘要翻译： 包括基座的舞台装置。 平台可动部分可沿底座的表面移动。 干涉仪使用测量光来测量舞台可动部分的位置。 管道元件和配线元件中的至少一个连接到台可动部。 包括彼此连接的多个构件的辅助构件引导管道元件和布线元件中的至少一个的弯曲部。 隔热片由辅助构件支承。 绝热材料设置在干涉仪的测量光通过的空间与管道元件和布线元件中的至少一个之间。

公开(公告)号：US08022524B2

公开(公告)日：2011-09-20

申请号：US12331670

申请日：2008-12-10

申请人： Hitoshi Sato

发明人： Hitoshi Sato

IPC分类号： H01L23/498 ,  H01L23/52

CPC分类号： H01L25/0657 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/16225 ,  H01L2225/06517 ,  H01L2225/06572 ,  H01L2225/06596 ,  H01L2924/00014 ,  H01L2924/01079 ,  H01L2924/15311 ,  H01L2924/19105 ,  H01L2224/05599

摘要： A semiconductor device includes a wiring board having: plural stacked insulating layers; test pads and external connection pads which are disposed on a face of the plural stacked insulating layers located on the side opposite to that where another wiring board is connected; first wiring patterns which electrically connect internal connection pads with the test pads; and second wiring patterns which electrically connect semiconductor element mounting pads with the external connection pads. The external connection pads are placed on the inner side of the test pads.

摘要翻译： 一种半导体器件包括具有多层堆叠绝缘层的布线板; 测试焊盘和外部连接焊盘，其设置在位于与另一布线板连接的相反侧的多个堆叠绝缘层的表面上; 将内部连接焊盘与测试焊盘电连接的第一布线图案; 以及将半导体元件安装焊盘与外部连接焊盘电连接的第二布线图案。 外部连接垫放置在测试垫的内侧。

公开(公告)号：US07979960B2

公开(公告)日：2011-07-19

申请号：US12159381

申请日：2006-12-27

申请人： Masanori Sano ,  Hitoshi Sato

发明人： Masanori Sano ,  Hitoshi Sato

IPC分类号： E05D3/10

CPC分类号： G06F1/1681 ,  E05D3/10 ,  E05Y2900/606 ,  G06F1/162 ,  Y10T16/5323 ,  Y10T16/5472

摘要： A two-axis hinge device with rotation regulating function including the rotation regulating function capable of wiring by passing a harness through a through hole of an axis member, simple in structure, and low in cost is provided. A folding axis [5] rotatably supporting one case and a rotational axis rotatably supporting the other case are set to intersect each other, a rotation allowing portion is formed by recessing an outer circumferential side surface of a rotational operation range restricting head portion rotatably supported by a base frame [1] and arranged on an end of the folding axis [5], a rotational operation range restricting deformed head portion arranged on an end of the rotational axis so as to face the rotational operation range restricting head portion, a restricting structure portion is formed at the deformed head portion so as to restrain rotation of the folding axis [5] by abutting the outer circumferential side surface of the rotation allowing portion on an end surface and so as to restrain rotation of the rotational axis when the outer circumferential side surface abuts on the end surface of the restricting head portion, and the rotation of the rotational axis is restricted to correspond to an opening or closing angle of the folding axis [5].

摘要翻译： 提供具有旋转调节功能的双轴铰链装置，其包括通过使线束穿过轴构件的通孔而能够进行布线的旋转调节功能，结构简单且成本低。 可旋转地支撑一个壳体的折叠轴线5和可旋转地支撑另一个壳体的旋转轴线被设置成彼此相交，旋转允许部分通过使旋转操作范围限制头部的外周侧表面凹陷而形成， 设置在折叠轴线[5]的端部的基架1，限制变形头部的旋转操作范围，该变形头部布置在旋转轴线的端部以面对旋转操作范围限制头部，限制结构 部分形成在变形的头部，以便通过使旋转允许部分的外周侧表面靠在端表面上来限制折叠轴线[5]的旋转，并且当外圆周 侧面抵接在限制头部的端面上，旋转轴的旋转受到限制 折叠轴的打开或关闭角度[5]。