发明申请
- 专利标题： METHOD FOR MODIFYING LIGHT ABSORPTION LAYER
- 专利标题（中）： 修改光吸收层的方法
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申请号： US13586938申请日： 2012-08-16
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公开(公告)号： US20130171759A1公开(公告)日： 2013-07-04
- 发明人: Wei-Chien Chen , Lung-Teng Cheng , Ding-Wen Chiou , Tung-Po Hsieh
- 申请人： Wei-Chien Chen , Lung-Teng Cheng , Ding-Wen Chiou , Tung-Po Hsieh
- 优先权： TW100149119 20111228
- 主分类号： H01L31/18
- IPC分类号： H01L31/18
摘要：
The disclosure discloses a method for modifying the light absorption layer, including: (a) providing a substrate; (b) forming a light absorption layer on the substrate, wherein the light absorption layer includes a Group IB element, Group IIIA element and Group VIA element; (c) forming a slurry on the light absorption layer, wherein the slurry includes a Group VIA element; and (d) conducting a thermal process for the light absorption layer with the slurry.
公开/授权文献
- US09169549B2 Method for modifying light absorption layer 公开/授权日：2015-10-27
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