发明申请
- 专利标题： Methods for Semiconductor Regrowth
- 专利标题（中）： 半导体再生方法
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申请号： US13414357申请日： 2012-03-07
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公开(公告)号： US20130171792A1公开(公告)日： 2013-07-04
- 发明人: Cheng-Tien Wan , You-Ru Lin , Yi-Jing Lee , Cheng-Hsien Wu , Chih-Hsin Ko , Clement Hsingjen Wann
- 申请人： Cheng-Tien Wan , You-Ru Lin , Yi-Jing Lee , Cheng-Hsien Wu , Chih-Hsin Ko , Clement Hsingjen Wann
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： H01L21/762
- IPC分类号： H01L21/762 ; H01L21/336
摘要：
A treatment is performed on a surface of a first semiconductor region, wherein the treatment is performed using process gases including an oxygen-containing gas and an etching gas for etching the semiconductor material. An epitaxy is performed to grow a second semiconductor region on the surface of the first semiconductor region.
公开/授权文献
- US08815712B2 Method for epitaxial re-growth of semiconductor region 公开/授权日：2014-08-26
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