发明申请
- 专利标题： CONTROLLING THRESHOLD VOLTAGE IN CARBON BASED FIELD EFFECT TRANSISTORS
- 专利标题（中）： 基于碳的场效应晶体管控制阈值电压
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申请号： US13607589申请日： 2012-09-07
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公开(公告)号： US20130175633A1公开(公告)日： 2013-07-11
- 发明人: Martin M. Frank , Dechao Guo , Shu-Jen Han , Kuen-Ting Shiu
- 申请人： Martin M. Frank , Dechao Guo , Shu-Jen Han , Kuen-Ting Shiu
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L27/092
- IPC分类号： H01L27/092
摘要：
A field effect transistor fabrication method includes defining a gate structure on a substrate, depositing a dielectric layer on the gate structure, depositing a first metal layer on the dielectric layer, removing a portion of the first metal layer, depositing a second metal layer, annealing the first and second metal layers, and defining a carbon based device on the dielectric layer and the gate structure.
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