发明申请
US20130178021A1 INTEGRATED CIRCUIT WITH A THIN BODY FIELD EFFECT TRANSISTOR AND CAPACITOR
失效
具有薄体场效应晶体管和电容器的集成电路
- 专利标题： INTEGRATED CIRCUIT WITH A THIN BODY FIELD EFFECT TRANSISTOR AND CAPACITOR
- 专利标题（中）： 具有薄体场效应晶体管和电容器的集成电路
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申请号： US13614908申请日： 2012-09-13
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公开(公告)号： US20130178021A1公开(公告)日： 2013-07-11
- 发明人: Kangguo CHENG , Bruce DORIS , Ali KHAKIFIROOZ , Ghavam G. SHAHIDI
- 申请人： Kangguo CHENG , Bruce DORIS , Ali KHAKIFIROOZ , Ghavam G. SHAHIDI
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L21/84
- IPC分类号： H01L21/84
摘要：
A transistor region of a first semiconductor layer and a capacitor region in the first semiconductor layer are isolated. A dummy gate structure is formed on the first semiconductor layer in the transistor region. A second semiconductor layer is formed on the first semiconductor layer. First and second portions of the second semiconductor layer are located in the transistor region, and a third portion of the second semiconductor layer is located in the capacitor region. First, second, and third silicide regions are formed on the first, second, and third portions of the second semiconductor layer, respectively. After forming a dielectric layer, the dummy gate structure is removed forming a first cavity. At least a portion of the dielectric layer located above the third silicide region is removed forming a second cavity. A gate dielectric is formed in the first cavity and a capacitor dielectric in the second cavity.
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