- 专利标题： RESISTIVE MEMORY CELL STRUCTURES AND METHODS
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申请号： US13352680申请日： 2012-01-18
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公开(公告)号： US20130181183A1公开(公告)日： 2013-07-18
- 发明人: Fabio Pellizzer , Ferdinando Bedeschi
- 申请人： Fabio Pellizzer , Ferdinando Bedeschi
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 主分类号： H01L45/00
- IPC分类号： H01L45/00 ; H01L21/62
摘要：
Resistive memory cell structures and methods are described herein. One or more memory cell structures comprise a first resistive memory cell comprising a first resistance variable material and a second resistive memory cell comprising a second resistance variable material that is different than the first resistance variable material.
公开/授权文献
- US09318699B2 Resistive memory cell structures and methods 公开/授权日：2016-04-19
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