Invention Application
- Patent Title: THIN FILM PATTERNING METHOD AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE THIN FILM PATTERNING METHOD
- Patent Title (中): 薄膜形成方法及使用薄膜形成方法制造半导体器件的方法
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Application No.: US13588689Application Date: 2012-08-17
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Publication No.: US20130183609A1Publication Date: 2013-07-18
- Inventor: Jong-baek SEON , Myung-kwan RYU , Sang-yoon LEE
- Applicant: Jong-baek SEON , Myung-kwan RYU , Sang-yoon LEE
- Applicant Address: KR Yongin-City KR Suwon-si
- Assignee: SAMSUNG DISPLAY CO., LTD.,SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG DISPLAY CO., LTD.,SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Yongin-City KR Suwon-si
- Priority: KR10-2012-0004912 20120116
- Main IPC: G03F7/20
- IPC: G03F7/20

Abstract:
A thin film patterning method may include forming a thin film by coating a precursor solution containing a precursor of metal oxide onto a substrate, soft baking the thin film, exposing the thin film to light by using a photomask, developing the thin film, and hard baking the developed thin film. The precursor may include metal acetate, for example, a zinc acetate-based material, and the metal oxide thin film may include zinc oxide (ZnO).
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Information query
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