公开(公告)号：US20130183609A1

公开(公告)日：2013-07-18

申请号：US13588689

申请日：2012-08-17

申请人： Jong-baek SEON ,  Myung-kwan RYU ,  Sang-yoon LEE

发明人： Jong-baek SEON ,  Myung-kwan RYU ,  Sang-yoon LEE

IPC分类号： G03F7/20

CPC分类号： G03F7/2002 ,  G03F7/0043 ,  G03F7/40 ,  H01L21/02554 ,  H01L21/02581 ,  H01L21/02628 ,  H01L21/46 ,  H01L29/7869

摘要： A thin film patterning method may include forming a thin film by coating a precursor solution containing a precursor of metal oxide onto a substrate, soft baking the thin film, exposing the thin film to light by using a photomask, developing the thin film, and hard baking the developed thin film. The precursor may include metal acetate, for example, a zinc acetate-based material, and the metal oxide thin film may include zinc oxide (ZnO).

摘要翻译： 薄膜图案化方法可以包括通过将含有金属氧化物前体的前体溶液涂布在基材上来形成薄膜，软化该薄膜，通过使用光掩模将该薄膜曝光，使薄膜显影，并使硬 烘焙发达的薄膜。 前体可以包括金属乙酸盐，例如乙酸锌基材料，并且金属氧化物薄膜可以包括氧化锌（ZnO）。

公开(公告)号：US20130221343A1

公开(公告)日：2013-08-29

申请号：US13588462

申请日：2012-08-17

申请人： Kyoung-seok SON ,  Myung-kwan RYU ,  Tae-sang KIM ,  Hyun-suk KIM ,  Joon-seok PARK ,  Jong-baek SEON ,  Sang-yoon LEE

发明人： Kyoung-seok SON ,  Myung-kwan RYU ,  Tae-sang KIM ,  Hyun-suk KIM ,  Joon-seok PARK ,  Jong-baek SEON ,  Sang-yoon LEE

IPC分类号： H01L29/786

CPC分类号： H01L29/78696 ,  H01L29/78618 ,  H01L29/78681 ,  H01L29/7869

摘要： A transistor may include a hole blocking layer between a channel layer including oxynitride and an electrode electrically connected to the channel layer. The hole blocking layer may be disposed in a region between the channel layer and at least one of a source electrode and a drain electrode. The channel layer may include, for example, zinc oxynitride (ZnON). A valence band maximum energy level of the hole blocking layer may be lower than a valence band maximum energy level of the channel layer.

摘要翻译： 晶体管可以包括在包括氮氧化物的沟道层和电连接到沟道层的电极之间的空穴阻挡层。 空穴阻挡层可以设置在沟道层与源电极和漏电极中的至少一个之间的区域中。 沟道层可以包括例如氮氧化锌（ZnON）。 空穴阻挡层的价带最大能级可以低于沟道层的价带最大能级。

公开(公告)号：US20120295407A1

公开(公告)日：2012-11-22

申请号：US13564082

申请日：2012-08-01

申请人： Byung-wook YOO ,  Sang-yoon LEE ,  Myung-kwan RYU ,  Tae-sang KIM ,  Jang-yeon KWON ,  Kyung-bae PARK ,  Kyung-seok SON ,  Ji-sim JUNG

发明人： Byung-wook YOO ,  Sang-yoon LEE ,  Myung-kwan RYU ,  Tae-sang KIM ,  Jang-yeon KWON ,  Kyung-bae PARK ,  Kyung-seok SON ,  Ji-sim JUNG

IPC分类号： H01L21/336

CPC分类号： H01L29/78696 ,  H01L21/02532 ,  H01L21/02672 ,  H01L27/1277 ,  H01L29/66765

摘要： A thin film transistor (TFT) and a method of manufacturing the same are provided, the TFT including a gate insulating layer on a gate. A channel may be formed on a portion of the gate insulating layer corresponding to the gate. A metal material may be formed on a surface of the channel. The metal material crystallizes the channel. A source and a drain may contact side surfaces of the channel.

摘要翻译： 提供薄膜晶体管（TFT）及其制造方法，TFT在栅极上包括栅极绝缘层。 可以在对应于栅极的栅极绝缘层的一部分上形成沟道。 可以在通道的表面上形成金属材料。 金属材料使通道结晶。 源极和漏极可以接触通道的侧表面。

公开(公告)号：US20080283831A1

公开(公告)日：2008-11-20

申请号：US11960567

申请日：2007-12-19

申请人： Myung-kwan RYU ,  Jun-seong KIM ,  Sang-yoon LEE ,  Euk-che HWANG ,  Tae-sang KIM ,  Jang-yeon KWON ,  Kyung-bae PARK ,  Kyung-seok SON ,  Ji-sim JUNG

发明人： Myung-kwan RYU ,  Jun-seong KIM ,  Sang-yoon LEE ,  Euk-che HWANG ,  Tae-sang KIM ,  Jang-yeon KWON ,  Kyung-bae PARK ,  Kyung-seok SON ,  Ji-sim JUNG

IPC分类号： H01L29/227 ,  H01L21/34

CPC分类号： H01L29/7869

摘要： A ZnO-based thin film transistor (TFT) is provided herein, as is a method of manufacturing the TFT. The ZnO-based TFT has a channel layer that comprises ZnO and ZnCl, wherein the ZnCl has a higher bonding energy than ZnO with respect to plasma. The ZnCl is formed through the entire channel layer, and specifically is formed in a region near THE surface of the channel layer. Since the ZnCl is strong enough not to be decomposed when exposed to plasma etching gas, an increase in the carrier concentration can be prevented. The distribution of ZnCl in the channel layer, may result from the inclusion of chlorine (Cl) in the plasma gas during the patterning of the channel layer.

摘要翻译： 这里提供了一种ZnO基薄膜晶体管（TFT），以及TFT的制造方法。 ZnO基TFT具有包含ZnO和ZnCl的沟道层，其中ZnCl相对于等离子体具有比ZnO高的结合能。 ZnCl是通过整个沟道层形成的，具体地形成在沟道层表面附近的区域。 由于ZnCl强度足够暴露于等离子体蚀刻气体时不会分解，因此可以防止载流子浓度的增加。 ZnCl在沟道层中的分布可能是由于在沟道层图案化期间在等离子体气体中包含氯（Cl）。

公开(公告)号：US20120168756A1

公开(公告)日：2012-07-05

申请号：US13157773

申请日：2011-06-10

申请人： Myung-kwan RYU ,  Jae-kyeong JEONG ,  Sang-yoon LEE

发明人： Myung-kwan RYU ,  Jae-kyeong JEONG ,  Sang-yoon LEE

IPC分类号： H01L33/16 ,  H01L29/786 ,  H01L29/04

CPC分类号： H01L29/78633 ,  H01L29/41733 ,  H01L29/7869

摘要： Transistors, methods of manufacturing the same, and electronic devices including the transistors. The transistor may include a light blocking member which surrounds at least a portion of the channel layer. The light blocking member may be designed to block light laterally incident from a side of the transistor toward the channel layer (that is, laterally incident light). The light blocking member may be disposed in a portion of a gate insulation layer outside the channel layer. The light blocking member may be connected to a source and a drain or may be connected to a gate. The light blocking member may be separated from the source, the drain and the gate. The light blocking member may completely surround the channel layer.

摘要翻译： 晶体管及其制造方法以及包括晶体管的电子器件。 晶体管可以包括围绕沟道层的至少一部分的遮光构件。 遮光构件可以被设计成阻挡从晶体管的侧面朝向沟道层（即，横向入射的光）侧向入射的光。 遮光构件可以设置在沟道层外部的栅极绝缘层的一部分中。 遮光构件可以连接到源极和漏极，或者可以连接到栅极。 遮光构件可以与源极，漏极和栅极分离。 光阻挡构件可以完全围绕通道层。

公开(公告)号：US20100051942A1

公开(公告)日：2010-03-04

申请号：US12615315

申请日：2009-11-10

申请人： Myung-kwan RYU ,  Jun-seong KIM ,  Sang-yoon LEE ,  Euk-che HWANG ,  Tae-sang KIM ,  Jang-yeon KWON ,  Kyung-bae PARK ,  Kyung-seok SON ,  Ji-sim JUNG

发明人： Myung-kwan RYU ,  Jun-seong KIM ,  Sang-yoon LEE ,  Euk-che HWANG ,  Tae-sang KIM ,  Jang-yeon KWON ,  Kyung-bae PARK ,  Kyung-seok SON ,  Ji-sim JUNG

IPC分类号： H01L29/227

CPC分类号： H01L29/7869

摘要： A ZnO-based thin film transistor (TFT) is provided herein, as is a method of manufacturing the TFT. The ZnO-based TFT has a channel layer that comprises ZnO and ZnCl, wherein the ZnCl has a higher bonding energy than ZnO with respect to plasma. The ZnCl is formed through the entire channel layer, and specifically is formed in a region near THE surface of the channel layer. Since the ZnCl is strong enough not to be decomposed when exposed to plasma etching gas, an increase in the carrier concentration can be prevented. The distribution of ZnCl in the channel layer, may result from the inclusion of chlorine (Cl) in the plasma gas during the patterning of the channel layer.

摘要翻译： 这里提供了一种ZnO基薄膜晶体管（TFT），以及TFT的制造方法。 ZnO基TFT具有包含ZnO和ZnCl的沟道层，其中ZnCl相对于等离子体具有比ZnO高的结合能。 ZnCl是通过整个沟道层形成的，具体地形成在沟道层表面附近的区域。 由于ZnCl强度足够暴露于等离子体蚀刻气体时不会分解，因此可以防止载流子浓度的增加。 ZnCl在沟道层中的分布可能是由于在沟道层图案化期间在等离子体气体中包含氯（Cl）。

公开(公告)号：US20080299702A1

公开(公告)日：2008-12-04

申请号：US12110744

申请日：2008-04-28

申请人： Kyoung-seok SON ,  Sang-yoon LEE ,  Myung-kwan RYU ,  Tae-sang KIM ,  Jang-yeon KWON ,  Kyung-bae PARK ,  Ji-sim JUNG

发明人： Kyoung-seok SON ,  Sang-yoon LEE ,  Myung-kwan RYU ,  Tae-sang KIM ,  Jang-yeon KWON ,  Kyung-bae PARK ,  Ji-sim JUNG

IPC分类号： H01L21/00 ,  H01L21/84

CPC分类号： H01L29/7869

摘要： A ZnO-based thin film transistor (TFT) is provided herein. Also provided is a method for manufacturing the TFT. The ZnO-based TFT is very sensitive to the oxygen concentration present in a channel layer. In order to prevent damage to a channel layer of a bottom gate TFT, and to avoid a deep negative threshold voltage resulting from damage to the channel layer, the method for manufacturing the ZnO-based TFT comprises formation of an etch stop layer or a passivation layer comprising unstable or incompletely bonded oxygen, and annealing the layers to induce an interfacial reaction between the oxide layer and the channel layer and to reduce the carrier concentration.

摘要翻译： 本文提供了一种ZnO基薄膜晶体管（TFT）。 还提供了一种用于制造TFT的方法。 ZnO基TFT对通道层中存在的氧浓度非常敏感。 为了防止对底栅TFT的沟道层的损坏，并且为了避免由于对沟道层的损坏而产生的深负阈值电压，制造ZnO基TFT的方法包括形成蚀刻停止层或钝化层 层，其包含不稳定或不完全结合的氧，并且退火层以在氧化物层和沟道层之间引起界面反应并降低载流子浓度。

公开(公告)号：US20080116457A1

公开(公告)日：2008-05-22

申请号：US11877308

申请日：2007-10-23

申请人： Kyung-bae PARK ,  Jang-yeon KWON ,  Sang-yoon LEE ,  Ji-sim JUNG

发明人： Kyung-bae PARK ,  Jang-yeon KWON ,  Sang-yoon LEE ,  Ji-sim JUNG

IPC分类号： H01L29/04 ,  H01L21/84

CPC分类号： H01L27/1251 ,  H01L27/1214 ,  H01L27/1229 ,  H01L27/3244 ,  H01L29/04 ,  H01L29/78696

摘要： Provided are a driving device for a unit pixel of an organic light emitting display having an improved structure and a method of manufacturing the same.

摘要翻译： 提供了一种具有改进结构的有机发光显示器的单位像素的驱动装置及其制造方法。

公开(公告)号：US20140093997A1

公开(公告)日：2014-04-03

申请号：US13633640

申请日：2012-10-02

申请人： Jong Won CHUNG ,  Bon Won KOO ,  Zhenan BAO ,  Gaurav GIRI ,  Sang-yoon LEE ,  Yong-wan JIN

发明人： Jong Won CHUNG ,  Bon Won KOO ,  Zhenan BAO ,  Gaurav GIRI ,  Sang-yoon LEE ,  Yong-wan JIN

IPC分类号： H01L51/40

CPC分类号： H01L51/0014 ,  H01L21/02282 ,  H01L51/0003 ,  H01L51/0007 ,  H01L51/0012 ,  H01L51/0028

摘要： A method of manufacturing an organic semiconductor thin film includes coating an organic semiconductor solution on a substrate, and shearing the organic semiconductor solution in a direction that results in a shearing stress being applied to the organic semiconductor solution to form the organic semiconductor thin film, wherein a speed of the shearing is controlled such that an intermolecular distance of the organic semiconductor solution is adjusted.

公开(公告)号：US20120119239A1

公开(公告)日：2012-05-17

申请号：US13297495

申请日：2011-11-16

申请人： Sun-kook KIM ,  In-seo KEE ,  Sang-yoon LEE

发明人： Sun-kook KIM ,  In-seo KEE ,  Sang-yoon LEE

IPC分类号： H01L33/08 ,  H01L33/52

CPC分类号： H01L27/3293 ,  H01L25/048 ,  H01L27/3211 ,  H01L27/322 ,  H01L51/5253 ,  H01L51/5265 ,  H01L51/5281 ,  H01L2251/5315 ,  H01L2251/5338 ,  H01L2924/0002 ,  H01L2924/00

摘要： An organic light-emitting display device includes a plurality of first and second electrodes which are spaced apart from each other on a substrate, a plurality of light-emitting layers between the first and second electrodes, a flexible thin encapsulation film on the second electrodes, and a color filter on the flexible thin encapsulation film.

摘要翻译： 一种有机发光显示装置，包括在基板上彼此间隔开的多个第一和第二电极，在第一和第二电极之间的多个发光层，在第二电极上的柔性薄封装膜， 和柔性薄膜封装膜上的滤色片。