Invention Application
- Patent Title: SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Patent Title (中): 半导体器件及其制造方法
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Application No.: US13742415Application Date: 2013-01-16
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Publication No.: US20130187152A1Publication Date: 2013-07-25
- Inventor: Shunpei Yamazaki , Yukie Suzuki , Kosei Noda , Yoshiaki Oikawa
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi-shi
- Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Current Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Current Assignee Address: JP Atsugi-shi
- Priority: JP2012-011160 20120123
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L29/66
Abstract:
A metal element of a metal film is introduced into the oxide semiconductor film by performing heat treatment in the state where the oxide semiconductor film is in contact with the metal film, so that a low-resistance region having resistance lower than that of a channel formation region is formed. A region of the metal film, which is in contact with the oxide semiconductor film, becomes a metal oxide insulating film by the heat treatment. After that, an unnecessary metal film is removed. Thus, the metal oxide insulating film can be formed over the low-resistance region.
Public/Granted literature
- US09653614B2 Semiconductor device and method for manufacturing the same Public/Granted day:2017-05-16
Information query
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