发明申请
US20130191047A1 ON-CHIP POLY-TO-CONTACT PROCESS MONITORING AND RELIABILITY EVALUATION SYSTEM AND METHOD OF USE
有权
片上多点接触过程监测与可靠性评估系统及其使用方法
- 专利标题： ON-CHIP POLY-TO-CONTACT PROCESS MONITORING AND RELIABILITY EVALUATION SYSTEM AND METHOD OF USE
- 专利标题（中）： 片上多点接触过程监测与可靠性评估系统及其使用方法
-
申请号： US13354547申请日： 2012-01-20
-
公开(公告)号： US20130191047A1公开(公告)日： 2013-07-25
- 发明人: Fen CHEN , Roger A. DUFRESNE , Timothy D. SULLIVAN , Yanfeng WANG
- 申请人： Fen CHEN , Roger A. DUFRESNE , Timothy D. SULLIVAN , Yanfeng WANG
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： G01R31/26
- IPC分类号： G01R31/26 ; G06F19/00
摘要：
An on-chip poly-to-contact process monitoring and reliability evaluation system and method of use are provided. A method includes determining a breakdown electrical field of each of one or more shallow trench isolation (STI) measurement structures corresponding to respective one or more original semiconductor structures. The method further includes determining a breakdown voltage of each of one or more substrate measurement structures corresponding to the respective one or more original semiconductor structures. The method further includes determining a space between a gate and a contact of each of the one or more original semiconductor structures based on the determined breakdown electrical field and the determined breakdown voltage.
公开/授权文献
信息查询
