- 专利标题： PRODUCTION OF AN INTEGRATED CIRCUIT INCLUDING ELECTRICAL CONTACT ON SiC
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申请号： US13802875申请日： 2013-03-14
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公开(公告)号： US20130193449A1公开(公告)日： 2013-08-01
- 发明人: Roland Rupp , Thomas Gutt , Michael Treu
- 申请人： Infineon Technologies Austria AG
- 申请人地址： AT Villach
- 专利权人： Infineon Technologies Austria AG
- 当前专利权人： Infineon Technologies Austria AG
- 当前专利权人地址： AT Villach
- 优先权： DE102006050360.0 20061025
- 主分类号： H01L21/04
- IPC分类号： H01L21/04 ; H01L29/47
摘要：
Production of an integrated circuit including an electrical contact on SiC is disclosed. One embodiment provides for production of an electrical contact on an SiC substrate, in which a conductive contact is produced on a boundary surface of the SiC substrate by irradiation and absorption of a laser pulse on an SiC substrate.
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