发明申请
- 专利标题： Semiconductor Device and Method of Manufacturing Thereof
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US13369075申请日： 2012-02-08
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公开(公告)号： US20130200502A1公开(公告)日： 2013-08-08
- 发明人: Ivan Nikitin , Stefan Landau , Joachim Mahler , Alexander Heinrich , Ralf Wombacher
- 申请人： Ivan Nikitin , Stefan Landau , Joachim Mahler , Alexander Heinrich , Ralf Wombacher
- 申请人地址： DE Neubiberg
- 专利权人： INFINEON TECHNOLOGIES AG
- 当前专利权人： INFINEON TECHNOLOGIES AG
- 当前专利权人地址： DE Neubiberg
- 主分类号： H01L23/495
- IPC分类号： H01L23/495 ; H01L21/56 ; H01L23/29 ; H01L21/78
摘要：
A method of manufacturing a semiconductor device includes providing a transfer foil. A plurality of semiconductor chips is placed on and adhered to the transfer foil. The plurality of semiconductor chips adhered to the transfer foil is placed over a multi-device carrier. Heat is applied to laminate the transfer foil over the multi-device carrier, thereby accommodating the plurality of semiconductor chips between the laminated transfer foil and the multi-device carrier.
公开/授权文献
- US08980687B2 Semiconductor device and method of manufacturing thereof 公开/授权日：2015-03-17
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IPC分类:
