发明申请
- 专利标题： Semiconductor Devices and Manufacturing Methods Thereof
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US13370132申请日： 2012-02-09
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公开(公告)号： US20130207163A1公开(公告)日： 2013-08-15
- 发明人: Chun-Chang Chen , Shun-Shing Yang , Shih-Chi Fu , Wang-Pen Mo , Hung-Chang Hsieh
- 申请人： Chun-Chang Chen , Shun-Shing Yang , Shih-Chi Fu , Wang-Pen Mo , Hung-Chang Hsieh
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： H01L27/04
- IPC分类号： H01L27/04 ; H01L21/20 ; H01L29/02
摘要：
Semiconductor devices and manufacturing methods thereof are disclosed. In one embodiment, a semiconductor device includes a workpiece with a first region having a plurality of first features and a second region having a plurality of second features proximate the first region. The first region and the second region share a patterning overlap region disposed between the first region and the second region. The patterning overlap region includes a residue feature with an aspect ratio of about 4 or less.
公开/授权文献
- US08692296B2 Semiconductor devices and manufacturing methods thereof 公开/授权日：2014-04-08
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