发明申请
- 专利标题： NOVEL PROCESS FOR FORMING A BIG VIA
- 专利标题（中）： 形成大威胁的新工艺
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申请号： US13397488申请日： 2012-02-15
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公开(公告)号： US20130207276A1公开(公告)日： 2013-08-15
- 发明人: Uway Tseng , Shu-Hui Su
- 申请人： Uway Tseng , Shu-Hui Su
- 申请人地址： TW Hsin-Chu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： H01L23/485
- IPC分类号： H01L23/485 ; H01L21/768
摘要：
The present disclosure provides a semiconductor device. The semiconductor device includes a first metal layer component formed over a substrate. The semiconductor device includes a via formed over the first metal layer component. The via has a recessed shape. The semiconductor device includes a second metal layer component formed over the via. The semiconductor device includes a first dielectric layer component formed over the substrate. The first dielectric layer component is located adjacent to, and partially over, the first metal layer component. The first dielectric layer component contains fluorine. The semiconductor device includes a second dielectric layer component formed over the first dielectric layer component. The first dielectric layer component and the second dielectric layer component are each located adjacent to the via. The second dielectric layer component is free of fluorine.
公开/授权文献
- US08716871B2 Big via structure 公开/授权日：2014-05-06
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