发明申请
- 专利标题： CAPACITOR DIELECTRIC COMPRISING SILICON-DOPED ZIRCONIUM OXIDE AND CAPACITOR USING THE SAME
- 专利标题（中）： 含有硅氧化锆的电容器电介质和使用其的电容器
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申请号： US13370312申请日： 2012-02-10
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公开(公告)号： US20130208403A1公开(公告)日： 2013-08-15
- 发明人: Noel Rocklein , Vishwanath Bhat , Chris Carlson
- 申请人： Noel Rocklein , Vishwanath Bhat , Chris Carlson
- 主分类号： H01G4/10
- IPC分类号： H01G4/10 ; C09D1/00
摘要：
A capacitor structure includes a storage node; a capacitor dielectric on the storage node; and a plate electrode on the capacitor dielectric. The capacitor dielectric may include a Si-doped ZrO2 layer or crystalline ZrSiOx with a Si/(Zr+Si) content ranging between 4-9% by atomic ratio. The capacitor structure further includes an interfacial TiO2/TiON layer between the storage node and the capacitor dielectric.
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