-
公开(公告)号：US11605503B2
公开(公告)日：2023-03-14
申请号：US16781459
申请日：2020-02-04
摘要： A capacitor that includes an insulating base material having a first main surface and a second main surface facing each other, the insulating base material defining first and second trenches extending from the first main surface into the base material such that first trench and the second trench overlap each other; a first conductor in the first trench; a first external electrode on the first main surface of the base material and connected to the first conductor; a second conductor in the second trench; and a second external electrode on the second main surface of the base material and connected to the second conductor.
-
公开(公告)号：US11581139B2
公开(公告)日：2023-02-14
申请号：US16951353
申请日：2020-11-18
申请人： Murata Manufacturing Co., Ltd. , COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
发明人： Sami Oukassi , Raphaël Salot , Frédéric Voiron , Valentin Sallaz
摘要： An integrated energy storage component that includes a substrate supporting a contoured layer having a region with a contoured surface such as elongated pores. A stack structure is provided conformally over the contoured surface of this region. The stack is a single or repeated instance of MOIM layers, or MIOM layers, the M layers being metal layers, or a quasi-metal such as TiN, the O layers being oxide layers containing ions, and the I layer being an ionic dielectric. The regions having a contoured surface may be formed of porous anodized alumina.
-
公开(公告)号：US11551873B2
公开(公告)日：2023-01-10
申请号：US16414365
申请日：2019-05-16
发明人： Takayuki Hattori , Yuto Yamato
摘要： A method of producing a multi-layer ceramic electronic component includes: producing a multi-layer unit including ceramic layers that are laminated in a first direction, internal electrodes that are disposed between the ceramic layers, and a side surface that faces in a second direction orthogonal to the first direction, the internal electrodes being exposed on the side surface; sintering the multi-layer unit; and forming a side margin on the side surface of the sintered multi-layer unit.
-
4.发明授权公开(公告)号：US11551867B2
公开(公告)日：2023-01-10
申请号：US17034507
申请日：2020-09-28
申请人： TDK CORPORATION
发明人： Masamitsu Haemori , Toshio Asahi , Hitoshi Saita
摘要： The present invention provides a dielectric composition having high relative permittivity and insulation resistance at high temperature. The dielectric composition includes a main component expressed by a compositional formula (Sr1-x, Cax)m(Ti1-yHfy)O3-δNδ, in which 0
-
公开(公告)号：US20220384564A1
公开(公告)日：2022-12-01
申请号：US17303390
申请日：2021-05-27
发明人： Hsueh-Chung Chen , Chih-Chao Yang
摘要： An interdigitated metal-insulator-metal capacitor structure is formed by a first unitary body of a first conductive material that includes a first metal plate, a first set of interdigitated electrodes protruding upwards from a top surface of the first metal plate, and a first set of connecting vias protruding downwards from a bottom surface of the first metal plate. A second unitary body of a second conductive material is disposed above the first unitary body and electrically separated from the first unitary body by an insulating layer. The second unitary body includes a second metal plate, a second set of interdigitated electrodes protruding downwards from a bottom surface of the second metal plate, and a second set of connecting vias protruding upwards from a top surface of the second metal plate. The first set of interdigitated electrodes are interleaved with the second set of interdigitated electrodes.
-
公开(公告)号：US20220262893A1
公开(公告)日：2022-08-18
申请号：US17174830
申请日：2021-02-12
发明人： Kyle Schoneck , Matthew A. Walther , Jason J. Bjorgaard , John R. Dangler , Layne A. Berge , Thomas W. Liang , Matthew Doyle
摘要： A temperature-dependent capacitor comprises a first conductive plate, a second conductive plate located in a parallel-planar orientation to the first conductive plate, and a dielectric material located between the first conductive plate and the second conductive plate, the dielectric material having a temperature-dependent dielectric constant (ε) value, wherein the temperature-dependent capacitor has a positive correlation of an operating temperature of the temperature-dependent capacitor to a capacitance value of the temperature-dependent capacitor.
-
公开(公告)号：US20220262801A1
公开(公告)日：2022-08-18
申请号：US17592397
申请日：2022-02-03
发明人： Russell Chin Yee TEO
IPC分类号： H01L27/108 , H01L49/02 , H01G4/10 , G06N10/00
摘要： Embodiments of the present disclosure generally relate to methods of forming a capacitor for DRAM. The method begins by preparing a substrate for forming the capacitor. A bottom electrode is formed on the top surface of the substrate. A dielectric layer is formed in contact with the bottom electrode. The material of the dielectric layer is one of a barium titanate, BaTiO3 (BTO) strontium titanate, SrTiO3 (STO), barium strontium titanate, BaSrTiO3 (BSTO), ZrSTO, ZrBTO, or ZrBSTO. A top electrode is formed on the dielectric layer and then a cap is formed on the top electrode.
-
公开(公告)号：US20220208477A1
公开(公告)日：2022-06-30
申请号：US17559189
申请日：2021-12-22
申请人： TDK CORPORATION
发明人： Masahiro Hiraoka , Hitoshi Saita
摘要： Disclosed herein is a thin film capacitor that includes a capacitive insulating film having first and second surfaces opposite to each other, a first capacitive electrode covering the first surface of the capacitive insulating film, and a second capacitive electrode covering the second surface of the capacitive insulating film. The first capacitive electrode is made of less noble metal having a lower spontaneous potential than a metal constituting the second capacitive electrode. A minute defective portion existing in the capacitive insulating film is closed by an insulator derived from a metal constituting the first capacitive electrode.
-
公开(公告)号：US11362170B2
公开(公告)日：2022-06-14
申请号：US17034988
申请日：2020-09-28
发明人： Chih-Fan Huang , Chih-Yang Pai , Yuan-Yang Hsiao , Tsung-Chieh Hsiao , Hui-Chi Chen , Dian-Hau Chen , Yen-Ming Chen
摘要： A metal-insulator-metal (MIM) capacitor structure and a method for forming the same are provided. The MIM capacitor structure includes a substrate, and the substrate includes a capacitor region and a non-capacitor region. The MIM capacitor structure includes a first electrode layer formed over the substrate, and a first spacer formed on a sidewall of the first electrode layer. The MIM capacitor structure includes a second electrode layer formed over the first electrode layer, and a second spacer formed on a sidewall of the second electrode layer. The second spacer is in direct contact with an interface between the second electrode layer and a first dielectric layer.
-
公开(公告)号：US11358904B2
公开(公告)日：2022-06-14
申请号：US15908193
申请日：2018-02-28
发明人： Jong Wook Roh , Daejin Yang , Doh Won Jung , Chan Kwak , Hyungjun Kim
IPC分类号： C04B35/491 , C04B35/468 , C04B35/47 , C04B35/472 , H01G4/10 , C01G41/00 , C01G41/02 , C01G29/00 , C01G35/00 , C07C211/63 , C07C211/01 , H01C7/115 , C04B35/475 , H01G4/12 , C04B35/495 , H01C7/00
摘要： A dielectric material, a method of manufacturing thereof, and a dielectric device and an electronic device including the same. A dielectric material includes a layered metal oxide including a first layer having a positive charge and a second layer having a negative charge which are laminated, a monolayer nanosheet exfoliated from the layered metal oxide, a nanosheet laminate of the monolayer nanosheets, or a combination thereof, wherein the dielectric material includes a two-dimensional layered material having a two-dimensional crystal structure and the two-dimensional layered material is represented by Chemical Formula 1.
-
-
-
-
-
-
-
-
-
搜索结果
596 条记录 (耗时 0.021 秒)