发明申请
- 专利标题: CMP Pad Cleaning Apparatus
- 专利标题(中): CMP垫清洁装置
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申请号: US13396854申请日: 2012-02-15
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公开(公告)号: US20130210323A1公开(公告)日: 2013-08-15
- 发明人: Jiann Lih Wu , Bo-I Lee , Soon Kang Huang , Chi-Ming Yang , Chin-Hsiang Lin
- 申请人: Jiann Lih Wu , Bo-I Lee , Soon Kang Huang , Chi-Ming Yang , Chin-Hsiang Lin
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 主分类号: B24B1/00
- IPC分类号: B24B1/00 ; B24B41/06
摘要:
The present disclosure relates to a two-phase cleaning element that enhances polishing pad cleaning so as to prevent wafer scratches and contamination in chemical mechanical polishing (CMP) processes. In some embodiments, the two-phase pad cleaning element comprises a first cleaning element and a second cleaning element configured to successively operate upon a section of a CMP polishing pad. The first cleaning element comprises a megasonic cleaning jet configured to utilize cavitation energy to dislodge particles embedded in the CMP polishing pad without damaging the surface of the polishing pad. The second cleaning element is configured to apply a high pressure mist, comprising two fluids, to remove by-products from the CMP polishing pad. By using megasonic cleaning to dislodge embedded particles a two-fluid mist to flush away by-products (e.g., including the dislodged embedded particles), the two-phase pad cleaning element enhances polishing pad cleaning.
公开/授权文献
- US09138861B2 CMP pad cleaning apparatus 公开/授权日:2015-09-22
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