Invention Application
US20130213798A1 MAGNETRON SPUTTERING DEVICE, METHOD FOR CONTROLLING MAGNETRON SPUTTERING DEVICE, AND FILM FORMING METHOD
审中-公开
磁控溅射装置,控制磁控溅射装置的方法和薄膜形成方法
- Patent Title: MAGNETRON SPUTTERING DEVICE, METHOD FOR CONTROLLING MAGNETRON SPUTTERING DEVICE, AND FILM FORMING METHOD
- Patent Title (中): 磁控溅射装置,控制磁控溅射装置的方法和薄膜形成方法
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Application No.: US13878695Application Date: 2011-10-17
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Publication No.: US20130213798A1Publication Date: 2013-08-22
- Inventor: Tokuo Yoshida
- Applicant: Tokuo Yoshida
- Applicant Address: JP Osaka
- Assignee: SHARP KABUSHIKI KAISHA
- Current Assignee: SHARP KABUSHIKI KAISHA
- Current Assignee Address: JP Osaka
- Priority: JP2010-237359 20101022
- International Application: PCT/JP2011/005786 WO 20111017
- Main IPC: C23C14/35
- IPC: C23C14/35

Abstract:
A magnetron sputtering device is provided with: a target part positioned in such a manner as to face a substrate held by a substrate holding part; a power source that supplies power to the target part; a magnet part that moves back and forth along the rear of the target part; a chamber having side walls that are electrically grounded; and a power source control part that controls the power source in such a manner that, while the magnet part is away from approach points, which are points respectively closest to the side walls, a prescribed voltage is applied to the target part by the power source, but the prescribed voltage is reduced when the magnet part reaches one of the approach points.
Information query
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