发明申请
- 专利标题： CIRCUIT BOARD AND DISPLAY DEVICE
- 专利标题（中）： 电路板和显示设备
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申请号： US13695082申请日： 2011-02-23
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公开(公告)号： US20130214279A1公开(公告)日： 2013-08-22
- 发明人: Jun Nishimura , Hideki Kitagawa , Atsuhito Murai , Hajime Imai , Shinya Tanaka , Mitsunori Imade , Tetsuo Kikuchi , Junya Shimada , Kazunori Morimoto
- 申请人： Jun Nishimura , Hideki Kitagawa , Atsuhito Murai , Hajime Imai , Shinya Tanaka , Mitsunori Imade , Tetsuo Kikuchi , Junya Shimada , Kazunori Morimoto
- 优先权： JP2010-105659 20100430
- 国际申请： PCT/JP2011/054046 WO 20110223
- 主分类号： H01L27/02
- IPC分类号： H01L27/02
摘要：
A source and drain electrode layer (3s/3d) of an oxide TFT element (3) is formed by a first conductive layer. A gate electrode (3g) of the oxide TFT element (3) and a gate electrode (5g) of an a-Si TFT element (5) are formed by a single conductive layer, that is, a second conductive layer. A source and drain electrode layer (5s/5d) of the a-Si TFT element (5) is formed by a third conductive layer. The third conductive layer is formed above the second conductive layer in a thickness direction in which each conductive layer is stacked on an insulating substrate (2). Further, the first conductive layer is formed below the second conductive layer in the thickness direction. Therefore, it is possible to provide a circuit board that can have an improved degree of integration of transistor elements formed on the insulating substrate.
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