发明申请
- 专利标题： PRODUCTION PROCESS OF EPITAXIAL SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE
- 专利标题（中）： 外壳碳化硅单晶基板的生产工艺
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申请号： US13881231申请日： 2011-11-15
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公开(公告)号： US20130217213A1公开(公告)日： 2013-08-22
- 发明人: Takashi Aigo , Hiroshi Tsuge , Masakazu Katsuno , Tatsuo Fujimoto , Hirokatsu Yashiro
- 申请人： Takashi Aigo , Hiroshi Tsuge , Masakazu Katsuno , Tatsuo Fujimoto , Hirokatsu Yashiro
- 申请人地址： JP Tokyo
- 专利权人： NIPPON STEEL & SUMITOMO METAL CORPORATION
- 当前专利权人： NIPPON STEEL & SUMITOMO METAL CORPORATION
- 当前专利权人地址： JP Tokyo
- 优先权： JP2010-256495 20101117
- 国际申请： PCT/JP2011/076303 WO 20111115
- 主分类号： H01L21/02
- IPC分类号： H01L21/02
摘要：
An object of the present invention is to provide a production process of an epitaxial silicon carbide single crystal substrate having a high-quality silicon carbide single crystal thin film reduced in the surface defect and the like on a silicon carbide single crystal substrate with a small off-angle.According to the present invention, in the production process of an epitaxial silicon carbide single crystal substrate having a high-quality silicon carbide single crystal thin film reduced in the surface defect and the like on a silicon carbide single crystal substrate with an off-angle of 4° or less, pretreatment etching to a depth of 0.1 to 1 μm is performed at a temperature of 1,550 to 1,650° C. by flowing a gas containing silicon and chlorine together with a hydrogen gas such that the silicon atom concentration becomes from 0.0001 to 0.01% based on hydrogen atoms in the hydrogen gas, and thereafter, an epitaxial layer is formed.