利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

11 条记录 (耗时 0.021 秒)

    Production process of epitaxial silicon carbide single crystal substrate
    2.
    发明授权
    Production process of epitaxial silicon carbide single crystal substrate 有权
    外延碳化硅单晶衬底的生产工艺

    公开(公告)号：US08927396B2

    公开(公告)日：2015-01-06

    申请号：US13881231

    申请日：2011-11-15

    申请人： Takashi Aigo ,  Hiroshi Tsuge ,  Masakazu Katsuno ,  Tatsuo Fujimoto ,  Hirokatsu Yashiro

    发明人： Takashi Aigo ,  Hiroshi Tsuge ,  Masakazu Katsuno ,  Tatsuo Fujimoto ,  Hirokatsu Yashiro

    IPC分类号： H01L21/20 ,  H01L21/02 ,  C30B25/18 ,  C30B29/36 ,  C30B25/02

    CPC分类号： H01L21/02378 ,  C30B25/02 ,  C30B25/18 ,  C30B25/186 ,  C30B29/36 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/0262 ,  H01L21/02658 ,  Y10S438/931

    摘要： An object of the present invention is to provide a production process of an epitaxial silicon carbide single crystal substrate having a high-quality silicon carbide single crystal thin film reduced in the surface defect and the like on a silicon carbide single crystal substrate with a small off-angle. According to the present invention, in the production process of an epitaxial silicon carbide single crystal substrate having a high-quality silicon carbide single crystal thin film reduced in the surface defect and the like on a silicon carbide single crystal substrate with an off-angle of 4° or less, pretreatment etching to a depth of 0.1 to 1 μm is performed at a temperature of 1,550 to 1,650° C. by flowing a gas containing silicon and chlorine together with a hydrogen gas such that the silicon atom concentration becomes from 0.0001 to 0.01% based on hydrogen atoms in the hydrogen gas, and thereafter, an epitaxial layer is formed.

    摘要翻译： 本发明的目的是提供一种外延碳化硅单晶衬底的制造方法，该外延碳化硅单晶衬底具有在具有小的剥离的碳化硅单晶衬底上具有减少表面缺陷等的高质量碳化硅单晶薄膜 -角度。 根据本发明，在具有在碳化硅单晶衬底上具有减小表面缺陷等的高质量碳化硅单晶薄膜的外延碳化硅单晶衬底的制造工艺中， 4°以下，通过使含有硅和氯的气体与氢气一起流动，使得硅原子浓度为0.0001〜0.0001，从而在1550〜1650℃的温度下进行0.1〜1μm深度的预处理蚀刻 0.01％，基于氢气中的氢原子，然后形成外延层。

    EPITAXIAL SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE AND METHOD FOR PRODUCING SAME
    6.
    发明申请
    EPITAXIAL SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE AND METHOD FOR PRODUCING SAME 审中-公开
    外延硅碳化物单晶基板及其制造方法

    公开(公告)号：US20130320357A1

    公开(公告)日：2013-12-05

    申请号：US13985810

    申请日：2012-04-20

    申请人： Takashi Aigo ,  Hiroshi Tsuge ,  Masakazu Katsuno ,  Tatsuo Fujimoto ,  Hirokatsu Yashiro ,  Wataru Ito

    发明人： Takashi Aigo ,  Hiroshi Tsuge ,  Masakazu Katsuno ,  Tatsuo Fujimoto ,  Hirokatsu Yashiro ,  Wataru Ito

    IPC分类号： H01L29/30

    CPC分类号： H01L29/30 ,  C23C16/325 ,  C30B25/02 ,  C30B25/20 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/0262 ,  H01L29/045 ,  H01L29/1608

    摘要： Provided are an epitaxial silicon carbide single crystal substrate having a high-quality silicon carbide single crystal thin film with less stacking faults on a silicon carbide single crystal substrate and a production method therefor. The epitaxial silicon carbide single crystal substrate is produced by growing a silicon carbide epitaxial layer on a silicon carbide single crystal substrate having an off-angle of 4° or less so that the number of stacking faults emitting light at wavelengths ranging from 400 to 600 nm by photoluminescence on the substrate is less than 10/cm2 in total. Additionally, the method for producing the epitaxial silicon carbide single crystal substrate forms the epitaxial layer by using chlorosilane as a silicon-based material gas and hydrocarbon gas as a carbon-based gas, at a growth temperature of 1600° C. to 1700° C., at a C/Si ratio of 0.5 to 1.0, and at a growth rate of 1 to 3 μm/hr.

    摘要翻译： 本发明提供一种外延碳化硅单晶衬底，其具有在碳化硅单晶衬底上具有较少堆垛层错的高质量碳化硅单晶薄膜及其制造方法。 外延碳化硅单晶衬底通过在偏离角为4°或更小的碳化硅单晶衬底上生长碳化硅外延层而制造，使得发射400至600nm波长的光的堆垛层错数 通过底物上的光致发光总共小于10 / cm2。 此外，外延碳化硅单晶衬底的制造方法在1600℃至1700℃的生长温度下，使用氯硅烷作为硅系材料气体和烃气体作为碳系气体，形成外延层 ，C / Si比为0.5〜1.0，生长速度为1〜3mum / hr。

    PRODUCTION PROCESS OF EPITAXIAL SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE
    7.
    发明申请
    PRODUCTION PROCESS OF EPITAXIAL SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE 有权
    外壳碳化硅单晶基板的生产工艺

    公开(公告)号：US20130217213A1

    公开(公告)日：2013-08-22

    申请号：US13881231

    申请日：2011-11-15

    申请人： Takashi Aigo ,  Hiroshi Tsuge ,  Masakazu Katsuno ,  Tatsuo Fujimoto ,  Hirokatsu Yashiro

    发明人： Takashi Aigo ,  Hiroshi Tsuge ,  Masakazu Katsuno ,  Tatsuo Fujimoto ,  Hirokatsu Yashiro

    IPC分类号： H01L21/02

    CPC分类号： H01L21/02378 ,  C30B25/02 ,  C30B25/18 ,  C30B25/186 ,  C30B29/36 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/0262 ,  H01L21/02658 ,  Y10S438/931

    摘要： An object of the present invention is to provide a production process of an epitaxial silicon carbide single crystal substrate having a high-quality silicon carbide single crystal thin film reduced in the surface defect and the like on a silicon carbide single crystal substrate with a small off-angle.According to the present invention, in the production process of an epitaxial silicon carbide single crystal substrate having a high-quality silicon carbide single crystal thin film reduced in the surface defect and the like on a silicon carbide single crystal substrate with an off-angle of 4° or less, pretreatment etching to a depth of 0.1 to 1 μm is performed at a temperature of 1,550 to 1,650° C. by flowing a gas containing silicon and chlorine together with a hydrogen gas such that the silicon atom concentration becomes from 0.0001 to 0.01% based on hydrogen atoms in the hydrogen gas, and thereafter, an epitaxial layer is formed.

    摘要翻译： 本发明的目的是提供一种外延碳化硅单晶衬底的制造方法，该外延碳化硅单晶衬底具有在具有小的剥离的碳化硅单晶衬底上具有减少表面缺陷等的高质量碳化硅单晶薄膜 -角度。 根据本发明，在具有在碳化硅单晶衬底上具有减小表面缺陷等的高质量碳化硅单晶薄膜的外延碳化硅单晶衬底的制造工艺中， 4°以下，通过使含有硅和氯的气体与氢气一起流动，使得硅原子浓度从0.0001变为0.0001〜，从而在1550〜1650℃的温度下进行0.1〜1μm的深度的预处理蚀刻 0.01％，基于氢气中的氢原子，然后形成外延层。

    Compound semiconductor substrate and process of producing same
    9.
    发明授权
    Compound semiconductor substrate and process of producing same 失效
    化合物半导体衬底及其制造方法

    公开(公告)号：US5833749A

    公开(公告)日：1998-11-10

    申请号：US585505

    申请日：1996-01-16

    申请人： Akihiro Moritani ,  Aiji Yabe ,  Akiyoshi Tachikawa ,  Takashi Aigo

    发明人： Akihiro Moritani ,  Aiji Yabe ,  Akiyoshi Tachikawa ,  Takashi Aigo

    IPC分类号： C30B25/18 ,  G01Q60/00 ,  G01Q90/00 ,  H01L21/20 ,  H01L21/338 ,  H01L29/04 ,  H01L29/10

    CPC分类号： B82Y15/00 ,  C30B25/18 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02463 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/02661 ,  H01L29/045 ,  H01L29/1075 ,  H01L29/66863 ,  Y10S117/902

    摘要： A compound semiconductor substrate having at least one compound semiconductor layer epitaxially grown on a silicon single crystal substrate, wherein the silicon single crystal substrate has a surface on which the compound semiconductor layer is epitaxially grown, the surface being inclined at an off angle of not more than 1 deg to a (100) plane of silicon crystal; and the compound semiconductor layer has a free or top surface having a roughness of 3 nm or less in terms of a mean square roughness, Rms, determined by an atomic force microscopic measurement in a view field area of 10 .mu.m.times.10 .mu.m or a roughness of 10.5 nm or less in terms of a maximum height difference, Ry. The compound semiconductor substrate is produced by a process comprising the steps of: preparing a silicon single crystal substrate having a surface inclined at an off angle of not more than 1 deg to a (100) plane of silicon crystal; forming a buffer layer of a first compound semiconductor layer having a thickness of 5 nm to 15 nm on the surface of the silicon single crystal substrate; and epitaxially growing a second compound semiconductor layer on the buffer layer.

    摘要翻译： 一种化合物半导体衬底，具有在硅单晶衬底上外延生长的至少一种化合物半导体层，其中所述硅单晶衬底具有外延生长所述化合物半导体层的表面，所述表面以不大于的角度倾斜 比硅晶体的（100）平面大1deg; 并且化合物半导体层具有以平均粗糙度表示的粗糙度为3nm以下的游离或顶面，通过在10m×10μm的视场面积中的原子力显微镜测定得到的Rms，或者粗糙度 在最大高差方面为10.5nm以下。 化合物半导体衬底通过包括以下步骤的方法制造：制备具有倾斜于硅晶体的（100）面的不大于1度的偏离角的表面的硅单晶衬底; 在所述硅单晶衬底的表面上形成厚度为5nm至15nm的第一化合物半导体层的缓冲层; 并在缓冲层上外延生长第二化合物半导体层。

    Method of growing compound semiconductor on silicon wafer
    10.
    发明授权
    Method of growing compound semiconductor on silicon wafer 失效
    在硅晶片上生长化合物半导体的方法

    公开(公告)号：US5438951A

    公开(公告)日：1995-08-08

    申请号：US169204

    申请日：1993-12-20

    申请人： Akiyoshi Tachikawa ,  Aiji Jono ,  Takashi Aigo ,  Akihiro Moritani

    发明人： Akiyoshi Tachikawa ,  Aiji Jono ,  Takashi Aigo ,  Akihiro Moritani

    IPC分类号： H01L21/20 ,  C30B25/02

    CPC分类号： H01L21/02661 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02463 ,  H01L21/0251 ,  H01L21/02513 ,  H01L21/02546 ,  H01L21/0262 ,  Y10S438/933

    摘要： A technique of heteroepitaxially growing compound semiconductor on a silicon wafer, which can simplify the growth sequence, and improve the productivity and the surface morphology of a growth film. In growing compound semiconductor on a silicon wafer, the growth sequence such as shown in FIG. 1 is used. A necessary thin buffer layer is continuously grown at the temperature raising period up to the crystal growth temperature. Therefore, an independent process of growing a buffer layer at a lower temperature is not necessary, and the surface morphology is also improved by this method of growing compound semiconductor on a silicon wafer.

    摘要翻译： 在硅晶片上异质外延生长化合物半导体的技术，其可以简化生长顺序，并且提高生长膜的生产率和表面形态。 在硅晶片上生长的化合物半导体中，生长顺序如图1所示。 1。 必要的薄缓冲层在升温阶段连续生长直至晶体生长温度。 因此，不需要在较低温度下生长缓冲层的独立工艺，并且通过在硅晶片上生长化合物半导体的方法也可以改善表面形态。