发明申请
- 专利标题: Semiconductor FET and Method for Manufacturing the Same
- 专利标题(中): 半导体FET及其制造方法
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申请号: US13697319申请日: 2012-03-26
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公开(公告)号: US20130221414A1公开(公告)日: 2013-08-29
- 发明人: Chao Zhao , Jun Luo , Huicai Zhong
- 申请人: Chao Zhao , Jun Luo , Huicai Zhong
- 优先权: CNCN201210045350.0 20120227
- 国际申请: PCT/CN2012/000377 WO 20120326
- 主分类号: H01L29/78
- IPC分类号: H01L29/78 ; H01L21/336
摘要:
The present invention provides a semiconductor FET and a method for manufacturing the same. The semiconductor FET may comprise: a gate wall; a fin outside the gate wall, both ends of the fin being connected with the source/drain regions on both ends of the fin; and a contact wall on both sides of the gate wall, the contact wall being connected with the source/drain regions via the underlying silicide layer, wherein an airgap is provided around the gate wall. Since an airgap is formed around the gate wall, and particularly the airgap is formed between the gate wall and the contact wall, it is possible to decrease the parasitic capacitance between the gate wall and the contact wall. As a result, the problem of excessive parasitic capacitance resulting from use of the contact wall can be effectively alleviated.