- 专利标题： Trench Capacitors and Methods of Forming the Same
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申请号： US13405092申请日： 2012-02-24
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公开(公告)号： US20130221483A1公开(公告)日： 2013-08-29
- 发明人: Thomas Popp , Stefan Pompl , Rudolf Berger
- 申请人： Thomas Popp , Stefan Pompl , Rudolf Berger
- 申请人地址： DE Neubiberg
- 专利权人： Infineon Technologies AG
- 当前专利权人： Infineon Technologies AG
- 当前专利权人地址： DE Neubiberg
- 主分类号： H01L29/92
- IPC分类号： H01L29/92 ; H01L21/02
摘要：
A method of forming a semiconductor device includes forming an opening having a sidewall in a substrate and forming a first epitaxial layer in the opening. The first epitaxial layer is formed in a first portion of the sidewall without growing in a second portion of the sidewall. A second epitaxial layer is formed in the opening after forming the first epitaxial layer. The second epitaxial layer is formed in the second portion of the sidewall. The first epitaxial layer is removed after forming the second epitaxial layer.
公开/授权文献
- US09111781B2 Trench capacitors and methods of forming the same 公开/授权日：2015-08-18
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