Invention Application
- Patent Title: SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Patent Title (中): 半导体器件及制造半导体器件的方法
-
Application No.: US13781496Application Date: 2013-02-28
-
Publication No.: US20130221520A1Publication Date: 2013-08-29
- Inventor: Satoshi UNO , Hideaki TSUCHIYA , Shinji YOKOGAWA
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Kanagawa
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Kanagawa
- Priority: JP2012-042806 20120229; JP2012-223966 20121009
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/498

Abstract:
A semiconductor chip SC includes an electrode pad PAD. A Cu pillar PIL is formed on the electrode pad PAD. In addition, an interconnect substrate INT includes a connection terminal TER. The connection terminal TER contains Cu. For example, the connection terminal TER is formed of Cu, and is formed, for example, in a land shape. However, the connection terminal TER may not be formed in a land shape. The Cu pillar PIL and the connection terminal TER are connected to each other through a solder layer SOL. The solder layer SOL contains Sn. A Ni layer NIL is formed on either the Cu pillar PIL or the connection terminal TER. The minimum value L of the thickness of the solder layer SOL is equal to or less than 20 μm.
Public/Granted literature
- US09159607B2 Semiconductor device and method of manufacturing semiconductor device Public/Granted day:2015-10-13
Information query
IPC分类: