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US20130221528A1 DEVICES AND METHODS RELATED TO A SPUTTERED TITANIUM TUNGSTEN LAYER FORMED OVER A COPPER INTERCONNECT STACK STRUCTURE 有权
与铜箔互连堆叠结构形成的溅射的钛金属层相关的器件和方法

  • Patent Title: DEVICES AND METHODS RELATED TO A SPUTTERED TITANIUM TUNGSTEN LAYER FORMED OVER A COPPER INTERCONNECT STACK STRUCTURE
  • Patent Title (中): 与铜箔互连堆叠结构形成的溅射的钛金属层相关的器件和方法
  • Application No.: US13774988
    Application Date: 2013-02-22
  • Publication No.: US20130221528A1
    Publication Date: 2013-08-29
  • Inventor: Kezia Cheng
  • Applicant: Skyworks Solutions, Inc.
  • Applicant Address: US MA Woburn
  • Assignee: Skyworks Solutions, Inc.
  • Current Assignee: Skyworks Solutions, Inc.
  • Current Assignee Address: US MA Woburn
  • Main IPC: H01L23/532
  • IPC: H01L23/532 ;  H01L21/768
DEVICES AND METHODS RELATED TO A SPUTTERED TITANIUM TUNGSTEN LAYER FORMED OVER A COPPER INTERCONNECT STACK STRUCTURE
Abstract:
Disclosed are devices and methods related to metallization of semiconductors. A metalized structure can include a stack disposed over a compound semiconductor, with the stack including a barrier, a copper (Cu) layer disposed over the barrier, and a first titanium (Ti) layer disposed over the Cu layer. The metalized structure can further include a sputtered titanium tungsten (TiW) layer disposed over the first Ti layer. The barrier can include an assembly of titanium nitride (TiN) and Ti layers. The metalized structure can further include a second Ti layer disposed over the sputtered TiW layer.
Abstract(Chinese):

公开了与半导体的金属化相关的器件和方法。 金属化结构可以包括设置在化合物半导体上的堆叠，堆叠包括阻挡层，设置在阻挡层上的铜（Cu）层和设置在Cu层上的第一钛（Ti）层。 金属化结构还可以包括设置在第一Ti层之上的溅射钛钨（TiW）层。 阻挡层可以包括氮化钛（TiN）和Ti层的组件。 金属化结构还可以包括设置在溅射TiW层上的第二Ti层。

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