Invention Application
US20130223143A1 NONVOLATILE MEMORY DEVICE HAVING ADJUSTABLE PROGRAM PULSE WIDTH
有权
具有可调节程序脉冲宽度的非易失性存储器件
- Patent Title: NONVOLATILE MEMORY DEVICE HAVING ADJUSTABLE PROGRAM PULSE WIDTH
- Patent Title (中): 具有可调节程序脉冲宽度的非易失性存储器件
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Application No.: US13721859Application Date: 2012-12-20
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Publication No.: US20130223143A1Publication Date: 2013-08-29
- Inventor: Yongsung CHO , Kihwan CHOI , Il Han PARK , KIiwhan SONG , Sangyong YOON
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-Si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-Si
- Priority: KR10-2012-0021059 20120229
- Main IPC: G11C7/04
- IPC: G11C7/04
Abstract:
A method of programming a nonvolatile memory device comprises determining a temperature condition of the nonvolatile memory device, determining a program pulse period according to the temperature condition, supplying a program voltage to a selected word line using the program pulse period, and supplying a pass voltage to unselected word lines while supplying the program voltage to the selected word line.
Public/Granted literature
- US09064545B2 Nonvolatile memory device having adjustable program pulse width Public/Granted day:2015-06-23
Information query
