发明申请
- 专利标题: DEVICE AND METHOD FOR REPAIRING MEMORY CELL AND MEMORY SYSTEM INCLUDING THE DEVICE
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申请号: US13753165申请日: 2013-01-29
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公开(公告)号: US20130227344A1公开(公告)日: 2013-08-29
- 发明人: Kyo-Min Sohn , Ho-Young Song , Sang-Joon Hwang , Cheol Kim , Dong-Hyun Sohn
- 申请人: Kyo-Min Sohn , Ho-Young Song , Sang-Joon Hwang , Cheol Kim , Dong-Hyun Sohn
- 主分类号: G06F11/27
- IPC分类号: G06F11/27 ; G06F11/20
摘要:
Provided are a method and an apparatus for repairing a memory cell in a memory test system. A test device detects a fail address by testing a memory device according to a test command, and temporarily stores the fail address in a fail address memory (FAM). The fail address is transmitted to the memory device according to a fail address transmission mode, is temporarily stored in a temporary fail address storage of the memory device, and is then stored in an anti-fuse array, which is a non-volatile storage device. To secure the reliability of data, stored data can be read to verify the data and a verification result can be transmitted in series or in parallel to the test device.