公开(公告)号：US20150097251A1

公开(公告)日：2015-04-09

申请号：US14569597

申请日：2014-12-12

申请人： Byoung-Ho KWON ,  Cheol KIM ,  Ho-Young KIM ,  Se-Jung PARK ,  Myeong-Cheol KIM ,  Bo-Kyeong KANG ,  Bo-Un YOON ,  Jae-Kwang CHOI ,  Si-Young CHOI ,  Suk-Hoon JEONG ,  Geum-Jung SEONG ,  Hee-Don JEONG ,  Yong-Joon CHOI ,  Ji-Eun HAN

发明人： Byoung-Ho KWON ,  Cheol KIM ,  Ho-Young KIM ,  Se-Jung PARK ,  Myeong-Cheol KIM ,  Bo-Kyeong KANG ,  Bo-Un YOON ,  Jae-Kwang CHOI ,  Si-Young CHOI ,  Suk-Hoon JEONG ,  Geum-Jung SEONG ,  Hee-Don JEONG ,  Yong-Joon CHOI ,  Ji-Eun HAN

IPC分类号： H01L27/088 ,  H01L21/8234 ,  H01L29/66

CPC分类号： H01L29/7853 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/3085 ,  H01L21/823431 ,  H01L21/823437 ,  H01L21/823481 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/845 ,  H01L27/0886 ,  H01L27/1211 ,  H01L29/0673 ,  H01L29/42364 ,  H01L29/4238 ,  H01L29/49 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/66795 ,  H01L29/78 ,  H01L29/785

摘要： Semiconductor devices may include a semiconductor substrate with a first semiconductor fin aligned end-to-end with a second semiconductor with a recess between facing ends of the first and second semiconductor fins. A first insulator pattern is formed adjacent sidewalls of the first and second semiconductor fins and a second insulator pattern is formed within the first recess. The second insulator pattern may have a top surface higher than a top surface of the first insulator pattern, such as to the height of the top surface of the fins (or higher or lower). First and second gates extend along sidewalls and a top surface of the first semiconductor fin. A dummy gate electrode may be formed on the top surface of the second insulator. Methods for manufacture of the same and modifications are also disclosed.

摘要翻译： 半导体器件可以包括具有第一半导体鳍片的半导体衬底，第一半导体鳍片端对端与第二半导体对准，第二半导体在第一和第二半导体鳍片的相对端之间具有凹陷。 第一绝缘体图案形成在第一和第二半导体鳍片的相邻侧壁附近，并且在第一凹部内形成第二绝缘体图案。 第二绝缘体图案可以具有高于第一绝缘体图案的顶表面的顶表面，例如高于鳍片（或更高或更低）的顶表面的高度。 第一和第二栅极沿第一半导体鳍片的侧壁和顶表面延伸。 可以在第二绝缘体的顶表面上形成伪栅电极。 还公开了其制造方法和修改方案。

公开(公告)号：US08916460B1

公开(公告)日：2014-12-23

申请号：US14270315

申请日：2014-05-05

申请人： Byoung-Ho Kwon ,  Cheol Kim ,  Ho-Young Kim ,  Se-Jung Park ,  Myeong-Cheol Kim ,  Bo-Kyeong Kang ,  Bo-Un Yoon ,  Jae-Kwang Choi ,  Si-Young Choi ,  Suk-Hoon Jeong ,  Geum-Jung Seong ,  Hee-Don Jeong ,  Yong-Joon Choi ,  Ji-Eun Han

发明人： Byoung-Ho Kwon ,  Cheol Kim ,  Ho-Young Kim ,  Se-Jung Park ,  Myeong-Cheol Kim ,  Bo-Kyeong Kang ,  Bo-Un Yoon ,  Jae-Kwang Choi ,  Si-Young Choi ,  Suk-Hoon Jeong ,  Geum-Jung Seong ,  Hee-Don Jeong ,  Yong-Joon Choi ,  Ji-Eun Han

IPC分类号： H01L29/49 ,  H01L29/78 ,  H01L21/336 ,  H01L29/66 ,  H01L21/8238

CPC分类号： H01L29/7853 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/3085 ,  H01L21/823431 ,  H01L21/823437 ,  H01L21/823481 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/845 ,  H01L27/0886 ,  H01L27/1211 ,  H01L29/0673 ,  H01L29/42364 ,  H01L29/4238 ,  H01L29/49 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/66795 ,  H01L29/78 ,  H01L29/785

摘要： Semiconductor devices may include a semiconductor substrate with a first semiconductor fin aligned end-to-end with a second semiconductor with a recess between facing ends of the first and second semiconductor fins. A first insulator pattern is formed adjacent sidewalls of the first and second semiconductor fins and a second insulator pattern is formed within the first recess. The second insulator pattern may have a top surface higher than a top surface of the first insulator pattern, such as to the height of the top surface of the fins (or higher or lower). First and second gates extend along sidewalls and a top surface of the first semiconductor fin. A dummy gate electrode may be formed on the top surface of the second insulator. Methods for manufacture of the same and modifications are also disclosed.

摘要翻译： 半导体器件可以包括具有第一半导体鳍片的半导体衬底，第一半导体鳍片端对端与第二半导体对准，第二半导体在第一和第二半导体鳍片的相对端之间具有凹陷。 第一绝缘体图案形成在第一和第二半导体鳍片的相邻侧壁附近，并且在第一凹部内形成第二绝缘体图案。 第二绝缘体图案可以具有高于第一绝缘体图案的顶表面的顶表面，例如高于鳍片（或更高或更低）的顶表面的高度。 第一和第二栅极沿第一半导体鳍片的侧壁和顶表面延伸。 可以在第二绝缘体的顶表面上形成伪栅电极。 还公开了其制造方法和修改方案。

公开(公告)号：US09190407B2

公开(公告)日：2015-11-17

申请号：US14569597

申请日：2014-12-12

申请人： Byoung-Ho Kwon ,  Cheol Kim ,  Ho-Young Kim ,  Se-Jung Park ,  Myeong-Cheol Kim ,  Bo-Kyeong Kang ,  Bo-Un Yoon ,  Jae-Kwang Choi ,  Si-Young Choi ,  Suk-Hoon Jeong ,  Geum-Jung Seong ,  Hee-Don Jeong ,  Yong-Joon Choi ,  Ji-Eun Han

发明人： Byoung-Ho Kwon ,  Cheol Kim ,  Ho-Young Kim ,  Se-Jung Park ,  Myeong-Cheol Kim ,  Bo-Kyeong Kang ,  Bo-Un Yoon ,  Jae-Kwang Choi ,  Si-Young Choi ,  Suk-Hoon Jeong ,  Geum-Jung Seong ,  Hee-Don Jeong ,  Yong-Joon Choi ,  Ji-Eun Han

IPC分类号： H01L27/088 ,  H01L29/78 ,  H01L29/66 ,  H01L21/8238 ,  H01L21/8234 ,  H01L29/49

CPC分类号： H01L29/7853 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/3085 ,  H01L21/823431 ,  H01L21/823437 ,  H01L21/823481 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/845 ,  H01L27/0886 ,  H01L27/1211 ,  H01L29/0673 ,  H01L29/42364 ,  H01L29/4238 ,  H01L29/49 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/66795 ,  H01L29/78 ,  H01L29/785

摘要： Semiconductor devices may include a semiconductor substrate with a first semiconductor fin aligned end-to-end with a second semiconductor with a recess between facing ends of the first and second semiconductor fins. A first insulator pattern is formed adjacent sidewalls of the first and second semiconductor fins and a second insulator pattern is formed within the first recess. The second insulator pattern may have a top surface higher than a top surface of the first insulator pattern, such as to the height of the top surface of the fins (or higher or lower). First and second gates extend along sidewalls and a top surface of the first semiconductor fin. A dummy gate electrode may be formed on the top surface of the second insulator. Methods for manufacture of the same and modifications are also disclosed.

摘要翻译： 半导体器件可以包括具有第一半导体鳍片的半导体衬底，第一半导体鳍片端对端与第二半导体对准，第二半导体在第一和第二半导体鳍片的相对端之间具有凹陷。 第一绝缘体图案形成在第一和第二半导体鳍片的相邻侧壁附近，并且在第一凹部内形成第二绝缘体图案。 第二绝缘体图案可以具有高于第一绝缘体图案的顶表面的顶表面，例如高于鳍片（或更高或更低）的顶表面的高度。 第一和第二栅极沿第一半导体鳍片的侧壁和顶表面延伸。 可以在第二绝缘体的顶表面上形成伪栅电极。 还公开了其制造方法和修改方案。

公开(公告)号：US12029450B2

公开(公告)日：2024-07-09

申请号：US18266639

申请日：2021-11-29

申请人： NITTO SEIKO CO., LTD. ,  KYOTO PREFECTURAL PUBLIC UNIVERSITY CORPORATION ,  Wook-Cheol Kim ,  NATIONAL UNIVERSITY CORPORATION UNIVERSITY OF TOYAMA

发明人： Masakazu Ishihara ,  Yoshimitsu Ueno ,  Tomoaki Murata ,  Yukito Otsuki ,  Yusuke Kobayashi ,  Yoshinobu Oka ,  Wook-Cheol Kim ,  Tetsuo Aida ,  Sadami Tsutsumi

IPC分类号： A61B17/58 ,  A61L31/02 ,  A61B17/00

CPC分类号： A61B17/58 ,  A61L31/022 ,  A61B2017/00004

摘要： To ensure that a biodegradable medical implement dissolves in vivo at an appropriate dissolution rate. The biodegradable medical implement of the present invention is formed of a magnesium material, and, at least in one transverse section, a layer of magnesium crystal grains in which a (0001) plane in a hexagonal crystal structure is oriented toward a surface side is continuous over an entire circumference.

公开(公告)号：US12008532B2

公开(公告)日：2024-06-11

申请号：US17178002

申请日：2021-02-17

申请人： Geum-Cheol Kim

发明人： Geum-Cheol Kim

IPC分类号： G06Q20/20 ,  G06Q20/40

CPC分类号： G06Q20/202 ,  G06Q20/4014

摘要： Not using any app, a URL medium including a vault URL containing a property of an ID of a user is used during a user confirmation process and a transaction request process (a payment request process or a charging request process), and transaction (a payment or a charging) is made using money from an external device (a URL vault account), not the URL medium. A URL medium can support a way of requesting a transaction (a payment or a charging) after checking a user, or can support a way of confirming a user after requesting a transaction (a payment or a charging). A URL medium can support offline transactions and online transactions, and two URL medium (a URL medium-B of a buyer and a URL medium-S of a seller) can support offline transactions that do not use a POS (a URL POS). A URL medium can also support transactions that temporarily approve a payment.

公开(公告)号：US20230274101A1

公开(公告)日：2023-08-31

申请号：US17784022

申请日：2020-12-07

申请人： Kyung Cheol KIM

发明人： Kyung Cheol KIM

IPC分类号： G06F40/58 ,  G10L15/26 ,  H04L12/18 ,  G10L15/00 ,  G06V40/20

CPC分类号： G06F40/58 ,  G10L15/26 ,  H04L12/1831 ,  G10L15/005 ,  G06V40/28

摘要： Disclosed are a broadcasting apparatus, a user terminal, a broadcasting system comprising same, and a control method thereof. The broadcasting apparatus, according to one aspect, may comprise: a communication unit that supports a video call between user terminals connected to a chat room through a communication network; an extraction unit that generates a video file and an audio file by using a video call-related video file received through the communication unit, and extracts original language information for each caller by using at least one of the video file and the audio file; a translation unit that generates translation information obtained by translating the original language information according to the language of a selected country; and a control unit that controls an interpretation/translation video, in which at least one of the original language information and the translation information is mapped to the video call-related video file, to be transmitted to viewer terminals and the user terminals connected to the chat room.

公开(公告)号：US20220351184A1

公开(公告)日：2022-11-03

申请号：US17425183

申请日：2020-01-23

申请人： Geum Cheol KIM

发明人： Geum Cheol KIM

IPC分类号： G06Q20/34 ,  G06Q20/20 ,  G06Q20/40

摘要： In online payment using the URL&CC, the routes of the payment request process and the user confirmation process are different and the order of these can be changed. (Payment method 1) Payment method 1 first requests payment by using the URL&CC's CCI path, and confirms the user by using the URL&CC's URL path and the user's URL PWD path. (Payment method 2) Payment method 2 confirms the user by using the URL&CC's URL path and the user's URL PWD path, and requests the payment by using the URL&CC's CCI path.

公开(公告)号：US20200046474A1

公开(公告)日：2020-02-13

申请号：US16340099

申请日：2017-01-10

申请人： Jong Cheol KIM ,  MEGAGEN IMPLANT CO., LTD.

发明人： Jong Cheol KIM ,  Kwang Bum PARK

IPC分类号： A61C13/34 ,  G06T7/33 ,  G06T19/20 ,  A61C9/00

摘要： An image generation system for implant diagnosis includes a first image information acquirement apparatus acquiring first three-dimensional (3D) image data about a mouth area of a target patient, a second image information acquirement apparatus acquiring second 3D image data by scanning plaster patterns of teeth of the target patient, and a data processing apparatus receiving and matching the first 3D image data and the second 3D image data and generating synthetic 3D image data. In the image generation system, the plaster patterns of teeth are provided with a matching reference marker for matching the first 3D image data and the second 3D image data, and the data processing apparatus pre-matches the first 3D image data and the second 3D image data based on a coordinate of a matching reference marker of the second 3D image data.

公开(公告)号：US10237093B2

公开(公告)日：2019-03-19

申请号：US13288762

申请日：2011-11-03

申请人： Hyun-Cheol Kim ,  Sung-Kwon Jo ,  Myung-Kwang Byun

发明人： Hyun-Cheol Kim ,  Sung-Kwon Jo ,  Myung-Kwang Byun

IPC分类号： H04B1/707 ,  H04L25/02 ,  H04B1/7107

摘要： A method and an apparatus apply an adaptive weight in a wireless communication system. In the method, channel estimation is performed. A weighting factor that reduces a Mean Square Error (MSE) is determined with respect to a channel in a specific section. A channel estimate value is multiplied by the weighting factor.

公开(公告)号：US09529705B2

公开(公告)日：2016-12-27

申请号：US14619142

申请日：2015-02-11

申请人： Hyun-Cheol Kim ,  Jinyeong Kim ,  Dae-Hoon Jang

发明人： Hyun-Cheol Kim ,  Jinyeong Kim ,  Dae-Hoon Jang

IPC分类号： G06F13/00 ,  G06F12/02 ,  G06F3/06

CPC分类号： G06F12/02 ,  G06F3/0652 ,  G06F12/0246 ,  G06F12/0253 ,  G06F2212/7201 ,  G06F2212/7205

摘要： A method of operating a memory controller controlling a nonvolatile memory device including a user area and a meta area is provided. The method includes selecting a source block among a plurality of memory blocks included in the user area, loading a mapping table stored in the meta area on the basis of a sub-bitmap of the selected source block, and generating a valid page layout constituted by valid pages among pages included in the source block on the basis of the loaded mapping table. The sub-bitmap includes information of a valid mapping table with respect to the selected source block.

摘要翻译： 提供了一种操作控制包括用户区域和元区域的非易失性存储器件的存储器控​​制的方法。 该方法包括：在包括在用户区域中的多个存储块之中选择源块，基于所选源块的子位图加载存储在元区中的映射表，并生成由 基于加载的映射表，源块中包含的页面之间的有效页面。 子位图包括关于所选源块的有效映射表的信息。