Invention Application
- Patent Title: INTERCONNECT STRUCTURES
- Patent Title (中): 互连结构
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Application No.: US13868140Application Date: 2013-04-23
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Publication No.: US20130228927A1Publication Date: 2013-09-05
- Inventor: Chen-Hua YU , Hai-Ching CHEN , Tien-I BAO
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Main IPC: H01L23/485
- IPC: H01L23/485 ; H01L21/768
Abstract:
A semiconductor structure includes a first dielectric layer over a substrate. At least one first conductive structure is within the first dielectric layer. The first conductive structure includes a cap portion extending above a top surface of the first dielectric layer. At least one first dielectric spacer is on at least one sidewall of the cap portion of the first conductive structure.
Public/Granted literature
- US09460988B2 Interconnect structures Public/Granted day:2016-10-04
Information query
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